IRF6798MTR1PBF

IRF6798MTR1PBF Datasheet

IRF6798MPbF

Part	Datasheet
IRF6798MTR1PBF	IRF6798MTR1PBF (pdf)

Related Parts	Information
IRF6798MTRPBF	IRF6798MTRPBF

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PD - 97433B IRF6798MPbF IRF6798MTRPbF Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode Typical values unless otherwise specified VDSS RDS on RDS on l Low Profile mm 25V max ±20V max 10V 4.5V l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qoss Vgs th l Low Package Inductance 50nC 16nC 6.8nC 64nC 38nC 1.8V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline see p.7,8 for The IRF6798MPbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by The IRF6798MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6798MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Absolute Maximum Ratings Parameter Drain-to-Source Voltage VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS Gate-to-Source Voltage e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current Max. 25 ±20 37 30 197 300 220 30 Units V Typical RDS on VGS, Gate-to-Source Voltage V ID = 37A ID= 30A VDS= 20V VDS= 13V 2 TJ = 125°C 1 TJ = 25°C

PDF Datasheet Preview

PD - 97433B

IRF6798MPbF

IRF6798MTRPbF

Power MOSFET plus Schottky Diode
l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode

Typical values unless otherwise specified

VDSS

RDS on

RDS on
l Low Profile mm
25V max ±20V max 10V 4.5V
l Dual Sided Cooling Compatible

Qg tot Qgd

Qgs2

Qoss Vgs th
l Low Package Inductance
50nC 16nC 6.8nC 64nC 38nC 1.8V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested

DirectFET ISOMETRIC

Applicable DirectFET Outline and Substrate Outline see p.7,8 for

The IRF6798MPbF combines the latest Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

The IRF6798MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6798MPbF has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

VGS ID TA = 25°C ID TA = 70°C ID TC = 25°C IDM EAS

Gate-to-Source Voltage
e Continuous Drain Current, VGS 10V e Continuous Drain Current, VGS 10V f Continuous Drain Current, VGS 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current

Max. 25 ±20 37 30 197 300 220 30

Units V

Typical RDS on VGS, Gate-to-Source Voltage V

ID = 37A

ID= 30A VDS= 20V

VDS= 13V
2 TJ = 125°C
1 TJ = 25°C

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Datasheet ID: IRF6798MTR1PBF 638327