MT4JTF25664HZ-1G6E1

MT4JTF25664HZ-1G6E1 Datasheet

MT4JTF12864HZ 1GB MT4JTF25664HZ 2GB

Part	Datasheet
MT4JTF25664HZ-1G6E1	MT4JTF25664HZ-1G6E1 (pdf)

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1GB, 2GB x64, SR 204-Pin DDR3 SODIMM Features DDR3 SDRAM SODIMM MT4JTF12864HZ 1GB MT4JTF25664HZ 2GB • DDR3 functionality and operations supported as defined in the component data sheet • 204-pin, small-outline dual in-line memory module SODIMM • Fast data transfer rates PC3-12800, PC3-10600, PC3-8500, or PC3-6400 • 1GB 128 Meg x 64 , 2GB 256 Meg x 64 • VDD = 1.5V ±0.075V • VDDSPD = • Nominal and dynamic on-die termination ODT for data, strobe, and mask signals • Single-rank • 8 internal device banks • Fixed burst chop BC of 4 and burst length BL of 8 via the mode register set MRS • Selectable BC4 or BL8 on-the-fly OTF • Gold edge contacts • Halogen-free • Fly-by topology • Terminated control, command, and address bus Figure 1 204-Pin SODIMM MO-268 R/C Module height 30mm 1.18in Options • Operating temperature Commercial 0°C TA +70°C • Package 204-pin DIMM halogen-free • Frequency/CAS latency 1.25ns CL = 11 DDR3-1600 1.5ns CL = 9 DDR3-1333 1.87ns CL = 7 DDR3-1066 Marking None -1G6 -1G4 -1G1 Table 1 Key Timing Parameters Speed Grade -1G6 -1G4 -1G1 -1G0 -80B Industry Nomenclature PC3-12800 PC3-10600 PC3-8500 PC3-8500 PC3-6400 CL = 11 CL = 10 1600 1333 1333 Data Rate MT/s CL = 9 CL = 8 CL = 7 1333 1066 1333 1066 1066 1066 CL = 6 800 CL = 5 667 tRCD ns 15 tRP ns 15 tRC ns Micron Technology, Inc. reserves the right to change products or specifications without notice. 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 1GB, 2GB x64, SR 204-Pin DDR3 SODIMM Features Table 2 Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address

PDF Datasheet Preview

1GB, 2GB x64, SR 204-Pin DDR3 SODIMM Features

DDR3 SDRAM SODIMM

MT4JTF12864HZ 1GB MT4JTF25664HZ 2GB
• DDR3 functionality and operations supported as defined in the component data sheet
• 204-pin, small-outline dual in-line memory module SODIMM
• Fast data transfer rates PC3-12800, PC3-10600, PC3-8500, or PC3-6400
• 1GB 128 Meg x 64 , 2GB 256 Meg x 64
• VDD = 1.5V ±0.075V
• VDDSPD =
• Nominal and dynamic on-die termination ODT for
data, strobe, and mask signals
• Single-rank
• 8 internal device banks
• Fixed burst chop BC of 4 and burst length BL of 8
via the mode register set MRS
• Selectable BC4 or BL8 on-the-fly OTF
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus

Figure 1 204-Pin SODIMM MO-268 R/C Module height 30mm 1.18in

Options
• Operating temperature Commercial 0°C TA +70°C
• Package 204-pin DIMM halogen-free
• Frequency/CAS latency 1.25ns CL = 11 DDR3-1600 1.5ns CL = 9 DDR3-1333 1.87ns CL = 7 DDR3-1066

Marking

None
-1G6 -1G4 -1G1

Table 1 Key Timing Parameters

Speed Grade -1G6 -1G4 -1G1 -1G0
-80B

Industry Nomenclature

PC3-12800 PC3-10600 PC3-8500 PC3-8500 PC3-6400

CL = 11 CL = 10
1600 1333
1333

Data Rate MT/s

CL = 9 CL = 8 CL = 7
1333 1066
1333 1066
1066
1066

CL = 6 800

CL = 5 667
tRCD ns 15
tRP ns 15
tRC ns

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2012 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
1GB, 2GB x64, SR 204-Pin DDR3 SODIMM Features

Table 2 Addressing

Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address

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Datasheet ID: MT4JTF25664HZ-1G6E1 648472