BSC079N03LSCGATMA1
BSC079N03LSCGATMA1 Datasheet
BSC079N03LSC G
| Part | Datasheet |
|---|---|
BSC079N03LSCGATMA1 |
BSC079N03LSCGATMA1 (pdf) |
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| OptiMOS 3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Improved switching behaviour • Qualified according to JEDEC1 for target applications • N-channel Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • Avalanche rated • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 BSC079N03LSC G Product Summary V DS R DS on ,max ID 30 V 50 A PG-TDSON-8 Type BSC079N03LSC G Package PG-TDSON-8 Marking 079N03LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current3 Avalanche current, single pulse4 Avalanche energy, single pulse Gate source voltage 1 J-STD20 and JESD22 V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=50 K/W2 I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=30 A, R GS=25 Value Unit ±20 2009-10-23 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C T A=25 °C, R thJA=50 K/W2 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 BSC079N03LSC G Value Unit -55 150 55/150/56 Parameter Symbol Conditions |
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