MT46V64M4P-5B:M

MT46V64M4P-5B:M Datasheet


MT46V64M4 16 Meg x 4 x 4 banks MT46V32M8 8 Meg x 8 x 4 banks MT46V16M16 4 Meg x 16 x 4 banks

Part Datasheet
MT46V64M4P-5B:M MT46V64M4P-5B:M MT46V64M4P-5B:M (pdf)
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256Mb x4, x8, x16 DDR SDRAM Features

Double Data Rate DDR SDRAM

MT46V64M4 16 Meg x 4 x 4 banks MT46V32M8 8 Meg x 8 x 4 banks MT46V16M16 4 Meg x 16 x 4 banks
• VDD = +2.5V ±0.2V, VDDQ = +2.5V ±0.2V VDD = +2.6V ±0.1V, VDDQ = +2.6V ±0.1V DDR400 1
• Bidirectional data strobe DQS transmitted/ received with data, that is, source-synchronous data capture x16 has two one per byte
• Internal, pipelined double-data-rate DDR architecture two data accesses per clock cycle
• Differential clock inputs CK and CK#
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask DM for masking write data
x16 has two one per byte
• Programmable burst lengths BL 2, 4, or 8
• Auto refresh
64ms, 8192-cycle
• Longer-lead TSOP for improved reliability OCPL
• 2.5V I/O SSTL_2-compatible
• Concurrent auto precharge option supported
• tRAS lockout supported tRAP = tRCD

Options
• Configuration 64 Meg x 4 16 Meg x 4 x 4 banks 32 Meg x 8 Meg x 8 x 4 banks 16 Meg x 16 4 Meg x 16 x 4 banks
• Plastic package OCPL 66-pin TSOP 66-pin TSOP Pb-free
• Plastic package 60-ball FBGA 8mm x 12.5mm 60-ball FBGA 8mm x 12.5mm

Pb-free
• Timing cycle time

Marking
64M4 32M8 16M16

CV CY
-5B -62 -6T2

None L

None IT
:K4 :M

Notes DDR400 devices operating at < DDR333 conditions can use VDD/VDDQ = +2.5V +0.2V.

Table 1:

Key Timing Parameters CL = CAS READ latency MIN clock rate with 50% duty cycle at CL = 2 -75E, -75Z , CL = -6, -6T, -75 , and CL = 3 -5B

Speed Grade
-5B -6 6T -75E/-75Z -75

CL = 2
133 100

Clock Rate MHz
167 133

CL = 3
200 n/a n/a n/a n/a

Data-Out Window
1.6ns 2.1ns 2.0ns 2.5ns 2.5ns

Access Window
±0.70ns ±0.70ns ±0.70ns ±0.75ns ±0.75ns

Skew
+0.40ns +0.40ns +0.45ns +0.50ns +0.50ns

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address, as shown in Table

Table 33 Burst Definition

Burst Length 2 4

Starting Column Address

Order of Accesses Within a Burst

Type = Sequential

Type = Interleaved
0-1-0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6
0-1-0-1-2-3 1-0-3-2-3-0-1 3-2-1-0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2000 Micron Technology, Inc. All rights reserved.
256Mb x4, x8, x16 DDR SDRAM Operations

CAS Latency CL

The CL is the delay, in clock cycles, between the registration of a READ command and the availability of the first bit of output data. The latency can be set to 2, or 3 -5B only clocks, as shown in Figure Reserved states should not be used, as unknown operation or incompatibility with future versions may result.

If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available nominally coincident with clock edge n + m. Table 34 on page 57 indicates the operating frequencies at which each CL setting can be used.

Figure 24 CAS Latency

CK# CK

Command

T0 READ

T1 NOP

CL = 2

CK# CK

Command

T0 READ

DQS DQ

NOP CL =

CK# CK

Command

T0 READ

T1 NOP

T2 NOP

CL = 3

Note:

Transitioning Data

Don’t Care

BL = 4 in the cases shown with nominal tAC, tDQSCK, and tDQSQ.

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2000 Micron Technology, Inc. All rights reserved.
256Mb x4, x8, x16 DDR SDRAM Operations

Table 34 CAS Latency

Speed -5B
-6/-6T -75E -75Z -75

Allowable Operating Clock Frequency MHz
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Datasheet ID: MT46V64M4P-5B:M 648446