MT45W512KW16BEGB
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MT45W512KW16BEGB-708 WT TR (pdf) |
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8Mb 512K x 16 Async/Page/Burst CellularRAM Memory Features Async/Page/Burst Memory MT45W512KW16BEGB • Single device supports asynchronous, page, and burst operations • Random access time 70ns • VCC, VCCQ voltages VCC VCCQ • Page mode read access 16-word page size Interpage read access 70ns Intrapage read access 20ns • Burst mode write access continuous burst • Burst mode read access 4, 8, or 16 words or continuous burst MAX clock rate 104 MHz tCLK = 9.62ns Burst initial latency 38.5ns 4 clocks at 104 MHz tACLK 7ns at 104 MHz • Low power consumption Asynchronous read <20mA Intrapage read <15mA Intrapage read initial access, burst read: 38.5ns [4 clocks] at 104 MHz <35mA Continuous burst read <28mA Standby <65µA Deep power-down DPD <10µA TYP at 25°C • Low-power features Partial-array refresh PAR DPD mode Options • Configuration 512K x 16 • Package 54-ball VFBGA “green” • Access time 70ns • Frequency 80 MHz 104 MHz • Standby power Standard Designator MT45W512KW16BE GB -70 8 1 None Figure 1 54-Ball VFBGA Ball Assignment DQ8 UB# CE# DQ0 DQ9 DQ10 A5 DQ1 DQ2 VSSQ DQ11 A17 VCCQ DQ12 NC DQ14 DQ13 A14 A15 DQ5 DQ6 DQ15 NC A12 A13 WE# DQ7 A10 A11 WAIT CLK ADV# NC Top view Ball down Options continued • Operating temperature range Wireless to +85°C 1 Industrial to +85°C 2 Designator WT IT Notes The 3.6V I/O and the wireless temperature exceed the CellularRAM Workgroup specification. Contact factory for availability. Part Number Example: MT45W512KW16BEGB-701WT Micron Technology, Inc., reserves the right to change products or specifications without notice. 2007 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 8Mb 512K x 16 Async/Page/Burst CellularRAM Memory Table of Contents Table of Contents |
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