MT45W4MW16BFB-708 WT
MT45W4MW16BFB-708 WT Datasheet
MT45W4MW16B*
| Part | Datasheet |
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MT45W4MW16BFB-708 WT |
MT45W4MW16BFB-708 WT (pdf) |
| Related Parts | Information |
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MT45W4MW16BBB-706 L WT |
MT45W4MW16BBB-706 L WT |
MT45W4MW16BFB-708 WT F |
MT45W4MW16BFB-708 WT F |
MT45W4MW16BFB-856 WT F TR |
MT45W4MW16BFB-856 WT F TR |
MT45W4MW16BBB-706 L WT TR |
MT45W4MW16BBB-706 L WT TR |
MT45W4MW16BFB-856 WT F |
MT45W4MW16BFB-856 WT F |
MT45W4MW16BFB-856 WT |
MT45W4MW16BFB-856 WT |
MT45W4MW16BFB-708 WT F TR |
MT45W4MW16BFB-708 WT F TR |
MT45W4MW16BFB-856 WT TR |
MT45W4MW16BFB-856 WT TR |
MT45W4MW16BFB-708 L WT TR |
MT45W4MW16BFB-708 L WT TR |
MT45W4MW16BFB-706 WT |
MT45W4MW16BFB-706 WT |
MT45W4MW16BFB-708 WT TR |
MT45W4MW16BFB-708 WT TR |
MT45W4MW16BFB-706 L WT TR |
MT45W4MW16BFB-706 L WT TR |
MT45W4MW16BFB-708 L WT |
MT45W4MW16BFB-708 L WT |
MT45W4MW16BFB-706 WT F |
MT45W4MW16BFB-706 WT F |
MT45W4MW16BFB-706 WT F TR |
MT45W4MW16BFB-706 WT F TR |
MT45W4MW16BFB-706 WT TR |
MT45W4MW16BFB-706 WT TR |
MT45W4MW16BBB-708 WT TR |
MT45W4MW16BBB-708 WT TR |
MT45W4MW16BBB-706 WT TR |
MT45W4MW16BBB-706 WT TR |
| PDF Datasheet Preview |
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| 64Mb 4 Meg x 16 Async/Page/Burst CellularRAM Memory Features Async/Page/Burst CellularRAMTM Memory MT45W4MW16B* *Note Not recommended for new designs. For the latest data sheet, refer to Micron’s Web site: • Single device supports asynchronous, page, and burst operations • Random access time 70ns • VCC, VCCQ voltages VCC VCCQ • Page mode read access Sixteen-word page size Interpage read access 70ns Intrapage read access 20ns • Burst mode write access Continuous burst • Burst mode read access 4, 8, or 16 words, or continuous burst MAX clock rate 80 MHz tCLK = 12.5ns Burst initial latency 50ns 4 clocks 80 MHz tACLK 9ns 80 MHz • Low power consumption Asynchronous READ <25mA Intrapage READ <15mA Initial access, burst READ 50ns [4 clocks] 80 MHz < 35mA Continuous burst READ <15mA Standby 120µA standard 100µA low-power option Deep power-down <10µA TYP 25°C • Low-power features Temperature-compensated refresh TCR Partial-array refresh PAR Deep power-down DPD mode Options • Configuration 4 Meg x 16 • Package 54-ball VFBGA standard 54-ball VFBGA lead-free • Timing 70ns access 85ns access Designator MT45W4MW16B1 FB BB2 -70 -85 Figure 1 Ball Assignment 54-Ball VFBGA DQ8 UB# CE# DQ0 DQ9 DQ10 A5 DQ1 DQ2 VSSQ DQ11 A17 VCCQ DQ12 A21 DQ14 DQ13 A14 A15 DQ5 DQ6 DQ15 A19 WE# DQ7 A11 A20 WAIT CLK ADV# NC Top View Ball Down Options continued • Frequency 66 MHz 80 MHz • Standby power Standard Low-power • Operating temperature range Wireless -30°C to +85°C Industrial -40°C to +85°C Designator None L WT3 IT2 Notes Not recommended for new designs. Contact factory. -30°C exceeds the CellularRAM Working Group specification of -25°C. Part Number Example: MT45W4MW16BFB-708LWT Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 64Mb 4 Meg x 16 Async/Page/Burst CellularRAM Memory Table of Contents Table of Contents |
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