MT36HTF1G72FZ-667C1D4

MT36HTF1G72FZ-667C1D4 Datasheet

MT36HTF25672FZ 2GB MT36HTF51272FZ 4GB MT36HTF1G72FZ 8GB

Part	Datasheet
MT36HTF1G72FZ-667C1D4	MT36HTF1G72FZ-667C1D4 (pdf)

Related Parts	Information
MT36HTF51272FZ-80EH1D6	MT36HTF51272FZ-80EH1D6
MT36HTF1G72FZ-667C1D6	MT36HTF1G72FZ-667C1D6
MT36HTF51272FZ-667H1N8	MT36HTF51272FZ-667H1N8
MT36HTF25672FZ-667G1N8	MT36HTF25672FZ-667G1N8
MT36HTF1G72FZ-80EC1D6	MT36HTF1G72FZ-80EC1D6

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2GB, 4GB, 8GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF25672FZ 2GB MT36HTF51272FZ 4GB MT36HTF1G72FZ 8GB • 240-pin, DDR2 fully buffered dual in-line memory module FBDIMM • Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400 • 2GB 256 Meg x 72 , 4GB 512 Meg x 72 , or 8GB 1 Gig x 72 • Gb/s, 4 Gb/s, or Gb/s link transfer rates • High-speed, 1.5V differential, point-to-point link between the host controller and advanced memory buffer AMB • Fault-tolerant can work around a bad bit lane in each direction • High-density scaling with up to eight FBDIMM devices per channel • SMBus interface to AMB for configuration register access • In-band and out-of-band command access • Deterministic protocol Enables memory controller to optimize DRAM accesses for maximum performance Delivers precise control and repeatable memory behavior • Automatic DDR2 SDRAM bus and channel calibration • Transmitter de-emphasis to reduce ISI Figure 1 240-Pin FBDIMM MO-256 R/C E Module height 30.35mm 1.19in Options • Package 240-pin DIMM halogen-free • Frequency/CAS latency 2.5ns CL = 5 DDR2-800 3.0ns CL = 5 DDR2-667 Marking -80E -667 Features Continued • MBIST and IBIST test functions • Transparent mode for DRAM test support • VDD = VDDQ = 1.8V for DRAM • VREF = 0.9V SDRAM command and address termina- tion • VCC = 1.5V for AMB • VDDSPD = for AMB and EEPROM • Serial presence-detect SPD with EEPROM • Gold edge contacts • Dual rank • Supports 95°C operation with 2X refresh Table 1 Key Timing Parameters Speed Grade -80E -667 -53E Industry Nomenclature PC2-6400 PC2-5300 PC2-4200 CL = 6 800 Data Rate MT/s CL = 5 CL = 4 CL = 3 400 tRCD ns 15 tRP ns 15 tRC ns 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2GB, 4GB, 8GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features Table 2 Addressing Parameter Refresh count Device bank address Device page size per bank Device configuration Row address Column address Module rank address 2GB 8K 4 BA[1:0] 1KB 512Mb 128 Meg x 4 16K A[13:0] 2K A[11, 9:0] 2 S#[1:0]

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2GB, 4GB, 8GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features

DDR2 SDRAM FBDIMM

MT36HTF25672FZ 2GB MT36HTF51272FZ 4GB MT36HTF1G72FZ 8GB
• 240-pin, DDR2 fully buffered dual in-line memory module FBDIMM
• Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400
• 2GB 256 Meg x 72 , 4GB 512 Meg x 72 , or 8GB 1 Gig x 72
• Gb/s, 4 Gb/s, or Gb/s link transfer rates
• High-speed, 1.5V differential, point-to-point link
between the host controller and advanced memory buffer AMB
• Fault-tolerant can work around a bad bit lane in each direction
• High-density scaling with up to eight FBDIMM devices per channel
• SMBus interface to AMB for configuration register access
• In-band and out-of-band command access
• Deterministic protocol

Enables memory controller to optimize DRAM accesses for maximum performance

Delivers precise control and repeatable memory behavior
• Automatic DDR2 SDRAM bus and channel calibration
• Transmitter de-emphasis to reduce ISI

Figure 1 240-Pin FBDIMM MO-256 R/C E

Module height 30.35mm 1.19in

Options
• Package 240-pin DIMM halogen-free
• Frequency/CAS latency 2.5ns CL = 5 DDR2-800 3.0ns CL = 5 DDR2-667

Marking
-80E -667

Features Continued
• MBIST and IBIST test functions
• Transparent mode for DRAM test support
• VDD = VDDQ = 1.8V for DRAM
• VREF = 0.9V SDRAM command and address termina-
tion
• VCC = 1.5V for AMB
• VDDSPD = for AMB and EEPROM
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Dual rank
• Supports 95°C operation with 2X refresh

Table 1 Key Timing Parameters

Speed Grade
-80E -667 -53E

Industry Nomenclature PC2-6400 PC2-5300 PC2-4200

CL = 6 800

Data Rate MT/s

CL = 5

CL = 4

CL = 3 400
tRCD ns 15
tRP ns 15
tRC ns 55

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
2GB, 4GB, 8GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features

Table 2 Addressing

Parameter Refresh count Device bank address Device page size per bank Device configuration Row address Column address Module rank address
2GB 8K 4 BA[1:0] 1KB 512Mb 128 Meg x 4 16K A[13:0] 2K A[11, 9:0] 2 S#[1:0]

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Datasheet ID: MT36HTF1G72FZ-667C1D4 648367