MT29F16G08DAAWP-ET:A TR

MT29F16G08DAAWP-ET:A TR Datasheet

MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA

Part	Datasheet
MT29F16G08DAAWP-ET:A TR	MT29F16G08DAAWP-ET:A TR (pdf)

Related Parts	Information
MT29F8G08BAAWP:A TR	MT29F8G08BAAWP:A TR
MT29F8G08AAAWP:A TR	MT29F8G08AAAWP:A TR
MT29F16G08DAAWP:A TR	MT29F16G08DAAWP:A TR

PDF Datasheet Preview
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Features NAND Flash Memory MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA • Single-level cell SLC technology • Organization Page size x8 2,112 bytes 2,048 + 64 bytes Block size 64 pages 128K + 4K bytes Plane size 2,048 blocks Device size 4Gb 4,096 blocks 8Gb 8,192 blocks; 16Gb 16,384 blocks • READ performance Random READ 25µs MAX Sequential READ 25ns MIN • WRITE performance PROGRAM PAGE 220µs TYP BLOCK ERASE 1.5ms TYP • Data retention 10 years • Endurance 100,000 PROGRAM/ERASE cycles • First block address 00h guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles1 • Industry-standard basic NAND Flash command set • Advanced command set PROGRAM PAGE CACHE MODE PAGE READ CACHE MODE One-time programmable OTP commands Two-plane commands Interleaved die operations READ UNIQUE ID contact factory READ ID2 contact factory • Operation status byte provides a software method of detecting Operation completion Pass/fail condition Write-protect status • Ready/busy# R/B# signal provides a hardware method of detecting operation completion • WP# signal write protect entire device • RESET required after power-up • INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1 48-Pin TSOP Type 1 Options • Density2 4Gb single die 8Gb dual-die stack 1 CE# 8Gb dual-die stack 2 CE# 16Gb quad-die stack • Device width x8 • Configuration # of die # of CE# # of R/B# I/O Common Common Common Common • VCC: • Package 48 TSOP type I lead-free plating 48 TSOP type I OCPL3 lead-free plating • Operating temperature Commercial 0°C to +70°C Extended to +85°C 4 Notes For further details, see “Error Management” on page For part numbering and markings, see Figure 2 on page OCPL = off-center parting line. For ET devices, contact factory. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2006 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Part Numbering Information Part Numbering Information NAND Flash devices are available in several different configurations and densities see Figure Figure 2 Part Number Chart MT 29F 4G 08 A WP Micron Technology Product Family 29F = Single-Supply NAND Flash Memory Density 4G = 4Gb 8G = 8Gb 16G = 16Gb

PDF Datasheet Preview

4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Features

NAND Flash Memory

MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA
• Single-level cell SLC technology
• Organization

Page size x8 2,112 bytes 2,048 + 64 bytes Block size 64 pages 128K + 4K bytes Plane size 2,048 blocks Device size 4Gb 4,096 blocks 8Gb 8,192 blocks;
16Gb 16,384 blocks
• READ performance

Random READ 25µs MAX Sequential READ 25ns MIN
• WRITE performance PROGRAM PAGE 220µs TYP BLOCK ERASE 1.5ms TYP
• Data retention 10 years
• Endurance 100,000 PROGRAM/ERASE cycles
• First block address 00h guaranteed to be valid up to 1,000 PROGRAM/ERASE cycles1
• Industry-standard basic NAND Flash command set
• Advanced command set PROGRAM PAGE CACHE MODE PAGE READ CACHE MODE One-time programmable OTP commands Two-plane commands Interleaved die operations READ UNIQUE ID contact factory READ ID2 contact factory
• Operation status byte provides a software method of detecting Operation completion Pass/fail condition Write-protect status
• Ready/busy# R/B# signal provides a hardware method of detecting operation completion
• WP# signal write protect entire device
• RESET required after power-up
• INTERNAL DATA MOVE operations supported within the plane from which data is read

Figure 1 48-Pin TSOP Type 1

Options
• Density2
4Gb single die
8Gb dual-die stack 1 CE#
8Gb dual-die stack 2 CE#
16Gb quad-die stack
• Device width x8
• Configuration
# of die # of CE# # of R/B# I/O

Common

Common

Common

Common
• VCC:
• Package
48 TSOP type I lead-free plating 48 TSOP type I OCPL3 lead-free plating
• Operating temperature

Commercial 0°C to +70°C Extended to +85°C 4

Notes For further details, see “Error Management” on page

For part numbering and markings, see Figure 2 on page

OCPL = off-center parting line. For ET devices, contact factory.

Micron Technology, Inc., reserves the right to change products or specifications without notice. 2006 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Part Numbering Information

Part Numbering Information

NAND Flash devices are available in several different configurations and densities see Figure

Figure 2 Part Number Chart

MT 29F 4G 08 A WP

Micron Technology

Product Family
29F = Single-Supply NAND Flash Memory

Density
4G = 4Gb 8G = 8Gb 16G = 16Gb

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT29F16G08DAAWP-ET:ATR Datasheet file may be downloaded here without warranties.

Datasheet ID: MT29F16G08DAAWP-ET:ATR 648366