MT28F800B3WG-9 TET
MT28F800B3WG-9 TET Datasheet
MT28F008B3 MT28F800B3
| Part | Datasheet |
|---|---|
MT28F800B3WG-9 TET |
MT28F800B3WG-9 TET (pdf) |
| Related Parts | Information |
|---|---|
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MT28F800B3WP-9 T |
MT28F800B3WP-9 T |
MT28F800B3SG-9 BET |
MT28F800B3SG-9 BET |
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MT28F800B3WG-9 BET |
MT28F800B3WG-9 BET |
MT28F008B3VG-9 B TR |
MT28F008B3VG-9 B TR |
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MT28F800B3WP-9 B |
MT28F800B3WP-9 B |
MT28F800B3SG-9 B TR |
MT28F800B3SG-9 B TR |
MT28F800B3SG-9 BET TR |
MT28F800B3SG-9 BET TR |
MT28F800B3SG-9 TET |
MT28F800B3SG-9 TET |
MT28F800B3SG-9 B |
MT28F800B3SG-9 B |
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MT28F800B3WP-9 T TR |
MT28F800B3WP-9 T TR |
MT28F800B3SG-9 TET TR |
MT28F800B3SG-9 TET TR |
|
MT28F800B3WG-9 B TR |
MT28F800B3WG-9 B TR |
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MT28F800B3WG-9 B |
MT28F800B3WG-9 B |
MT28F008B3VG-9 B |
MT28F008B3VG-9 B |
MT28F008B3VG-9 BET |
MT28F008B3VG-9 BET |
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MT28F800B3WG-9 TET TR |
MT28F800B3WG-9 TET TR |
MT28F008B3VG-9 TET |
MT28F008B3VG-9 TET |
MT28F008B3VG-9 BET TR |
MT28F008B3VG-9 BET TR |
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MT28F800B3WG-9 BET TR |
MT28F800B3WG-9 BET TR |
MT28F008B3VG-9 T TR |
MT28F008B3VG-9 T TR |
MT28F008B3VG-9 TET TR |
MT28F008B3VG-9 TET TR |
|
MT28F800B3WP-9 B TR |
MT28F800B3WP-9 B TR |
MT28F008B3VP-9 B |
MT28F008B3VP-9 B |
MT28F800B3SG-9 T TR |
MT28F800B3SG-9 T TR |
|
MT28F800B3WG-9 T TR |
MT28F800B3WG-9 T TR |
MT28F008B3VP-9 B TR |
MT28F008B3VP-9 B TR |
|
MT28F800B3WG-9 T |
MT28F800B3WG-9 T |
MT28F800B3SG-9 T |
MT28F800B3SG-9 T |
MT28F008B3VG-9 T |
MT28F008B3VG-9 T |
| PDF Datasheet Preview |
|---|
| FLASH MEMORY 8Mb SMART 3 BOOT BLOCK FLASH MEMORY MT28F008B3 MT28F800B3 3V ONLY, DUAL SUPPLY SMART 3 • Eleven erase blocks 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technology B3 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.3µm Smart 3 device • Advanced 0.18µm CMOS floating-gate process • Address access time 90ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • TSOP, SOP and FBGA packaging options • Byte- or word-wide READ and WRITE MT28F800B3 1 Meg x 8/512K x 16 Options • Timing 90ns access • Configurations 1 Meg x 8 512K x 16/1 Meg x 8 • Boot Block Starting Word Address Top 7FFFFh Bottom • Operating Temperature Range Commercial 0ºC to +70ºC Extended -40ºC to +85ºC • Packages MT28F008B3 Plastic 40-pin standard TSOP Type I Plastic 40-pin lead free TSOP Type I MT28F800B3 Plastic 48-pin standard TSOP Type I Plastic 48-pin lead free TSOP Type I Plastic 44-pin standard SOP Plastic 44-pin lead free SOP Marking MT28F008B3 MT28F800B3 None ET VG VP WG WP SG2 SP2 NOTE: This generation of devices does not support 12V VPP production programming however, 5V VPP application production programming can be used with no loss of performance. Contact Factory for availability Part Number Example: MT28F800B3WG-9 40-Pin TSOP Type I 48-Pin TSOP Type I 44-Pin SOP The MT28F008B3 x8 and MT28F800B3 x16/x8 are low-voltage, nonvolatile, electrically block-erasable flash , programmable memory devices containing 8,388,608 bits organized as 524,288 words 16 bits or 1,048,576 bytes 8 bits . Writing and erasing the device is done with a VPP voltage of either 3.3V or 5V, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F008B3 and MT28F800B3 are organized into eleven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Refer to Micron’s Web site for the latest data sheet. 2001 Micron Technology, Inc. All rights reserved. PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. 8Mb SMART 3 BOOT BLOCK FLASH MEMORY Figure 1 Pin Assignment Top View 48-Pin TSOP Type I 44-Pin SOP BYTE# DQ15/ A - 1 DQ14 DQ13 DQ12 |
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