MT18HTF25672PZ-80EH1

MT18HTF25672PZ-80EH1 Datasheet

MT18HTF12872PZ 1GB MT18HTF25672PZ 2GB MT18HTF51272PZ 4GB

Part	Datasheet
MT18HTF25672PZ-80EH1	MT18HTF25672PZ-80EH1 (pdf)

Related Parts	Information
MT18HTF12872PZ-667G1	MT18HTF12872PZ-667G1
MT18HTF25672PZ-667H1	MT18HTF25672PZ-667H1

PDF Datasheet Preview
1GB, 2GB, 4GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT18HTF12872PZ 1GB MT18HTF25672PZ 2GB MT18HTF51272PZ 4GB • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , 4GB 512 Meg x72 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Single rank • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts • Halogen-free Figure 1 240-Pin RDIMM MO-237 R/C H Module height 30mm 1.181in Options • Parity • Operating temperature Commercial 0°C TC +85°C Industrial TA +85°C 1 • Package 240-pin DIMM halogen-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 Marking None I -80E -800 -667 Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved.

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1GB, 2GB, 4GB x72, ECC, SR 240-Pin DDR2 SDRAM RDIMM Features

DDR2 SDRAM RDIMM

MT18HTF12872PZ 1GB MT18HTF25672PZ 2GB MT18HTF51272PZ 4GB
• 240-pin, registered dual in-line memory module
• Fast data transfer rates PC2-3200, PC2-4200,

PC2-5300, or PC2-6400
• 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , 4GB 512 Meg x72
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency CL
• Posted CAS# additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Halogen-free

Figure 1 240-Pin RDIMM MO-237 R/C H

Module height 30mm 1.181in

Options
• Parity
• Operating temperature

Commercial 0°C TC +85°C Industrial TA +85°C 1
• Package 240-pin DIMM halogen-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667

Marking

None I
-80E -800 -667

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency registered mode will add one clock cycle to CL.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

PC2-3200

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT18HTF25672PZ-80EH1 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT18HTF25672PZ-80EH1 648323