BSM150GD60DLC
BSM150GD60DLC Datasheet
BSM 150 GD 60 DLC
| Part | Datasheet |
|---|---|
BSM150GD60DLC |
BSM150GD60DLC (pdf) |
| PDF Datasheet Preview |
|---|
| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 150 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tc= 55°C Tc= 25°C Periodischer Kollektor Spitzenstrom repetitive peak collector current tP= 1ms, Tc= 55°C Gesamt-Verlustleistung total power dissipation Tc= 25°C, Transistor Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP= 1ms Grenzlastintegral der Diode I2t - value, Diode VR= 0V, tp= 10ms, Tvj= 125°C Isolations-Prüfspannung insulation test voltage RMS, f= 50Hz, t= 1min. VCES IC,nom. ICRM Ptot VGES +/- 20V IFRM VISOL Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage IC= 150A, VGE= 15V, Tvj= 25°C IC= 150A, VGE= 15V, Tvj= 125°C Gate-Schwellenspannung gate threshold voltage IC= 3,0mA, VCE= VGE, Tvj= 25°C Eingangskapazität input capacitance f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25°C VCE= 600V, VGE= 0V, Tvj= 125°C VCE= 0V, VGE= 20V, Tvj= 25°C min. typ. max. 1,95 2,45 |
| More datasheets: HM1F53TAP000H6 | HM1F53TBP000H6 | HM1F52TAP000H6 | HM1F51TBP000H6 | HM1F51TAP000H6 | HM1F54TBP000H6 | HM1F52TBP000H6 | DCM-37S-NMBK52 | MH04-10S-300W | 639102700 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BSM150GD60DLC Datasheet file may be downloaded here without warranties.