MT18HTF51272PDZ-80EC1

MT18HTF51272PDZ-80EC1 Datasheet

MT18HTF12872PDZ 1GB MT18HTF25672PDZ 2GB MT18HTF51272PDZ 4GB

Part	Datasheet
MT18HTF51272PDZ-80EC1	MT18HTF51272PDZ-80EC1 (pdf)

Related Parts	Information
MT18HTF25672PDZ-80EM1	MT18HTF25672PDZ-80EM1
MT18HTF25672PDZ-667H1	MT18HTF25672PDZ-667H1
MT18HTF25672PDZ-80EH1	MT18HTF25672PDZ-80EH1
MT18HTF12872PDZ-667G1	MT18HTF12872PDZ-667G1

PDF Datasheet Preview
1GB, 2GB, 4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM RDIMM MT18HTF12872PDZ 1GB MT18HTF25672PDZ 2GB MT18HTF51272PDZ 4GB • 240-pin, registered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , 4GB 512 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = +1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Dual rank • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts • Halogen-free Figure 1 240-Pin RDIMM MO-237 R/C G Module height 30mm 1.181in Options • Parity • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM halogen-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 Marking None T -80E -800 -667 Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.

PDF Datasheet Preview

1GB, 2GB, 4GB x72, ECC, DR 240-Pin DDR2 SDRAM RDIMM Features

DDR2 SDRAM RDIMM

MT18HTF12872PDZ 1GB MT18HTF25672PDZ 2GB MT18HTF51272PDZ 4GB
• 240-pin, registered dual in-line memory module
• Fast data transfer rates PC2-3200, PC2-4200,

PC2-5300, or PC2-6400
• 1GB 128 Meg x 72 , 2GB 256 Meg x 72 , 4GB 512 Meg x 72
• Supports ECC error detection and correction
• VDD = VDDQ = +1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Dual rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency CL
• Posted CAS# additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Halogen-free

Figure 1 240-Pin RDIMM MO-237 R/C G

Module height 30mm 1.181in

Options
• Parity
• Operating temperature

Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 240-pin DIMM halogen-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667

Marking

None T
-80E -800 -667

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency registered mode will add one clock cycle to CL.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

PC2-3200

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT18HTF51272PDZ-80EC1 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT18HTF51272PDZ-80EC1 648322