MT16HTF25664AY-53ED1
MT16HTF25664AY-53ED1 Datasheet
MT16HTF6464A 512MB MT16HTF12864A 1GB MT16HTF25664A 2GB
| Part | Datasheet |
|---|---|
MT16HTF25664AY-53ED1 |
MT16HTF25664AY-53ED1 (pdf) |
| Related Parts | Information |
|---|---|
MT16HTF12864AY-40EB1 |
MT16HTF12864AY-40EB1 |
MT16HTF12864AY-53EB4 |
MT16HTF12864AY-53EB4 |
MT16HTF6464AY-40EB2 |
MT16HTF6464AY-40EB2 |
MT16HTF12864AY-53EB1 |
MT16HTF12864AY-53EB1 |
MT16HTF12864AY-667B3 |
MT16HTF12864AY-667B3 |
MT16HTF6464AY-667B4 |
MT16HTF6464AY-667B4 |
MT16HTF12864AY-40EB3 |
MT16HTF12864AY-40EB3 |
MT16HTF25664AY-53EA1 |
MT16HTF25664AY-53EA1 |
MT16HTF25664AY-40EA1 |
MT16HTF25664AY-40EA1 |
MT16HTF25664AY-40ED1 |
MT16HTF25664AY-40ED1 |
MT16HTF25664AY-667EA3 |
MT16HTF25664AY-667EA3 |
MT16HTF12864AY-53ED1 |
MT16HTF12864AY-53ED1 |
MT16HTF12864AY-80ED3 |
MT16HTF12864AY-80ED3 |
MT16HTF12864AY-53ED4 |
MT16HTF12864AY-53ED4 |
MT16HTF12864AY-800D1 |
MT16HTF12864AY-800D1 |
MT16HTF12864AY-40ED4 |
MT16HTF12864AY-40ED4 |
MT16HTF12864AY-80ED4 |
MT16HTF12864AY-80ED4 |
MT16HTF25664AY-667A3 |
MT16HTF25664AY-667A3 |
MT16HTF12864AY-667D4 |
MT16HTF12864AY-667D4 |
MT16HTF12864AY-40ED1 |
MT16HTF12864AY-40ED1 |
| PDF Datasheet Preview |
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| 512MB, 1GB, 2GB x64, DR 240-Pin DDR2 SDRAM UDIMM Features DDR2 SDRAM Unbuffered DIMM MT16HTF6464A 512MB MT16HTF12864A 1GB MT16HTF25664A 2GB For component specifications, refer to the Micron’s Web site: • 240-pin, unbuffered, dual in-line memory module UDIMM • Fast data transfer rates PC2-3200, PC2-4200, PC25300, or PC2-6400 • 512MB 64 Meg x 64 , 1GB 128 Meg x 64 , and 2GB 256 Meg x 64 • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • Four-bit prefetch architecture • DLL to align DQ and DQS transitions with CK • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts • Dual rank Figure 1 240-Pin DIMM MO-237 R/C “B” PCB height 29.97mm 1.18in Options • Package 240-pin DIMM lead-free • Frequency/CL1 2.5ns CL = 5 DDR2-800 2 3.0ns CL = 5 DDR2-667 3 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB height 29.97mm 1.18in Marking -80E -667 -53E -40E Notes CL = CAS READ latency. Not available in 512MB density. Not available in 2GB density. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2003 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512MB, 1GB, 2GB x64, DR 240-Pin DDR2 SDRAM UDIMM Features Table 1 Address Table Refresh count Row addressing Device bank addressing Device page size per bank Device configuration Column addressing Module rank addressing 512MB 8K 4 BA0, BA1 1KB 256Mb 32 Meg x 8 1K 2 S0#, S1# 8K 16K 4 BA0, BA1 1KB 512Mb 64 Meg x 8 1K 2 S0#, S1# 8K 16K 8 BA0, BA1, BA2 1KB 1Gb 128 Meg x 8 1K 2 S0#, S1# Table 2 Key Timing Parameters Data Rate MT/s tRCD Speed Grade |
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