M29W256GH7AN6F TR

M29W256GH7AN6F TR Datasheet

M29W256GH, M29W256GL

Part	Datasheet
M29W256GH7AN6F TR	M29W256GH7AN6F TR (pdf)

Related Parts	Information
M29W256GL7AN6F TR	M29W256GL7AN6F TR
M29W256GL7AZS6F TR	M29W256GL7AZS6F TR

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256Mb 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL • Supply voltage VCC = program, erase, read VCCQ = I/O buffers VPPH = 12V for fast program optional • Asynchronous random/page read Page size 8 words or 16 bytes Page access 25ns, 30ns Random access 60ns1, 70ns, 80ns • Fast program commands 32-word 64-byte write buffer • Enhanced buffered program commands 256-word • Program time 16µs per byte/word TYP Chip program time 10s with VPPH and 16s with- out VPPH • Memory organization Uniform blocks 256 main blocks, 128KB, or 64Kwords each • Program/erase controller Embedded byte/word program algorithms • Program/erase suspend and resume capability Read from any block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation • Unlock bypass, block erase, chip erase, write to buffer and program Fast buffered/batch programming Fast block/chip erase • VPP/WP# pin protection Protects first or last block regardless of block -protection settings • Software protection Volatile protection Nonvolatile protection Password protection • Extended memory block 128-word 256-byte memory block for permanent, secure identification Programmed or locked at the factory or by the customer • Common Flash interface 64-bit security code • Low power consumption Standby and automatic mode • JESD47H-compliant 100,000 minimum PROGRAM/ERASE cycles per block Data retention 20 years TYP • 65nm single-level cell SLC process technology • Fortified BGA, TBGA, and TSOP packages • "Green" packages available RoHS-compliant Halogen-free • Automotive device grade 6 temperature to +85°C automotive grade-certified • Automotive device grade 3 temperature to +125°C automotive grade-certified Note The 60ns device is available upon customer request. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 256Mb 3V Embedded Parallel NOR Flash Features Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at Feature and specification comparison by device type is available at Contact the factory for devices not found. Table 1 Part Number Information Part Number Category Device type Operating voltage Device function Speed Package Temperature range Shipping options Category Details M29W W = VCC = to 3.6V 256GH = 256Mb x8/x16 page, uniform block Flash memory, highest block protected by VPP/WP# 256GL = 256Mb x8/x16 page, uniform block Flash memory, lowest block protected by VPP/WP# 70 = 70ns 60 = 60ns 7A = 70ns N = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant ZA = 64-ball TBGA, 10mm x 13mm, lead-free, halogen-free, RoHS-compliant ZS = 64-ball fortified BGA, 11mm x 13mm 1 = 0 to 70°C 6 = to +85°C 3 = to +125°C E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing Notes 1, 2 1, 3 80ns if VCCQ = 1.65V to VCC. The 60ns device is available upon customer request. Automotive-qualified, available only with option Qualified and characterized according to AEC Q100 and Q003 or equivalent advanced screening according to AEC Q001 and Q002 or equivalent. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. 256Mb 3V Embedded Parallel NOR Flash Features

PDF Datasheet Preview

256Mb 3V Embedded Parallel NOR Flash Features

Parallel NOR Flash Embedded Memory

M29W256GH, M29W256GL
• Supply voltage VCC = program, erase, read VCCQ = I/O buffers VPPH = 12V for fast program optional
• Asynchronous random/page read Page size 8 words or 16 bytes Page access 25ns, 30ns Random access 60ns1, 70ns, 80ns
• Fast program commands 32-word 64-byte write buffer
• Enhanced buffered program commands 256-word
• Program time
16µs per byte/word TYP Chip program time 10s with VPPH and 16s with-
out VPPH
• Memory organization

Uniform blocks 256 main blocks, 128KB, or 64Kwords each
• Program/erase controller Embedded byte/word program algorithms
• Program/erase suspend and resume capability Read from any block during a PROGRAM SUSPEND operation Read or program another block during an ERASE SUSPEND operation
• Unlock bypass, block erase, chip erase, write to buffer and program Fast buffered/batch programming Fast block/chip erase
• VPP/WP# pin protection Protects first or last block regardless of block -protection settings
• Software protection Volatile protection Nonvolatile protection Password protection
• Extended memory block 128-word 256-byte memory block for permanent, secure identification Programmed or locked at the factory or by the customer
• Common Flash interface 64-bit security code
• Low power consumption Standby and automatic mode
• JESD47H-compliant 100,000 minimum PROGRAM/ERASE cycles per block Data retention 20 years TYP
• 65nm single-level cell SLC process technology
• Fortified BGA, TBGA, and TSOP packages
• "Green" packages available

RoHS-compliant Halogen-free
• Automotive device grade 6 temperature to +85°C automotive grade-certified
• Automotive device grade 3 temperature to +125°C automotive grade-certified

Note The 60ns device is available upon customer request.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
256Mb 3V Embedded Parallel NOR Flash Features

Part Numbering Information

Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to For available options, such as packages or high/low protection, or for further information, contact your Micron sales representative. Part numbers can be verified at Feature and specification comparison by device type is available at Contact the factory for devices not found.

Table 1 Part Number Information

Part Number Category

Device type Operating voltage Device function

Speed

Package

Temperature range

Shipping options

Category Details M29W W = VCC = to 3.6V 256GH = 256Mb x8/x16 page, uniform block Flash memory, highest block protected by VPP/WP# 256GL = 256Mb x8/x16 page, uniform block Flash memory, lowest block protected by VPP/WP# 70 = 70ns 60 = 60ns 7A = 70ns N = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant ZA = 64-ball TBGA, 10mm x 13mm, lead-free, halogen-free, RoHS-compliant ZS = 64-ball fortified BGA, 11mm x 13mm 1 = 0 to 70°C 6 = to +85°C 3 = to +125°C E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing

Notes
1, 2 1, 3
80ns if VCCQ = 1.65V to VCC. The 60ns device is available upon customer request.

Automotive-qualified, available only with option Qualified and characterized according to AEC Q100 and Q003 or equivalent advanced screening according to AEC Q001 and Q002 or equivalent.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.
256Mb 3V Embedded Parallel NOR Flash Features

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived M29W256GH7AN6FTR Datasheet file may be downloaded here without warranties.

Datasheet ID: M29W256GH7AN6FTR 648291