FIO50-12BD

FIO50-12BD Datasheet


FIO 50-12BD

Part Datasheet
FIO50-12BD FIO50-12BD FIO50-12BD (pdf)
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FIO 50-12BD

Bidirectional Switch with NPT3 IGBT and fast Diode Bridge
in ISOPLUS i4-PACTM

IC25
= 50 A

VCES
= 1200 V

VCE sat typ. = V

IGBT

Symbol VCES VGES IC25 IC90 ICM VCEK t

SCSOA Ptot

VCE sat

V GE th

ICES

IGES t
tr td off tf Eon Eoff Cies QGon R
thJC

RthJS

Conditions

Maximum Ratings
t TVJ = 25°C to 150°C
1200
± 20
u TC = 25°C

TC = 90°C
o VGE = ±15 V RG = 39 TVJ = 125°C - RBSOA, Clamped inductive load L = 100 µH

VCES
900V;
±15
125°C
e non-repetitive

TC = 25°C
a s Conditions

Characteristic Values

TVJ = 25°C, unless otherwise specified min. typ. max.
h IC = 30 A VGE = 15 V TVJ = 25°C TVJ = 125°C

I = 1 mA V = V
• NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits
• ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873
switches to control bidirectional current

VCE = VCES VGE = 0 V TVJ = 25°C TVJ = 125°C
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Datasheet ID: FIO50-12BD 644208