FIO 50-12BD
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FIO50-12BD (pdf) |
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FIO 50-12BD Bidirectional Switch with NPT3 IGBT and fast Diode Bridge in ISOPLUS i4-PACTM IC25 = 50 A VCES = 1200 V VCE sat typ. = V IGBT Symbol VCES VGES IC25 IC90 ICM VCEK t SCSOA Ptot VCE sat V GE th ICES IGES t tr td off tf Eon Eoff Cies QGon R thJC RthJS Conditions Maximum Ratings t TVJ = 25°C to 150°C 1200 ± 20 u TC = 25°C TC = 90°C o VGE = ±15 V RG = 39 TVJ = 125°C - RBSOA, Clamped inductive load L = 100 µH VCES 900V; ±15 125°C e non-repetitive TC = 25°C a s Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. h IC = 30 A VGE = 15 V TVJ = 25°C TVJ = 125°C I = 1 mA V = V • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline - UL registered, E 72873 switches to control bidirectional current VCE = VCES VGE = 0 V TVJ = 25°C TVJ = 125°C |
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