SST39LF010-45-4C-WHE

SST39LF010-45-4C-WHE Datasheet

SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040

Part	Datasheet
SST39LF010-45-4C-WHE	SST39LF010-45-4C-WHE (pdf)

Related Parts	Information
SST39LF040-45-4C-NHE-T	SST39LF040-45-4C-NHE-T
SST39LF010-45-4C-B3KE	SST39LF010-45-4C-B3KE
SST39VF040-70-4C-B3KE	SST39VF040-70-4C-B3KE
SST39LF010-45-4C-MME	SST39LF010-45-4C-MME
SST39LF040-45-4C-WHE-T	SST39LF040-45-4C-WHE-T
SST39LF010-45-4C-NHE	SST39LF010-45-4C-NHE
SST39LF040-45-4C-NHE	SST39LF040-45-4C-NHE
SST39LF020-45-4C-WHE	SST39LF020-45-4C-WHE
SST39VF010-70-4C-B3KE	SST39VF010-70-4C-B3KE
SST39LF020-45-4C-NHE	SST39LF020-45-4C-NHE
SST39LF040-45-4C-WHE	SST39LF040-45-4C-WHE
SST39LF040-45-4C-B3KE	SST39LF040-45-4C-B3KE
SST39VF010-70-4C-WHE-T	SST39VF010-70-4C-WHE-T
SST39LF020-45-4C-MME-T	SST39LF020-45-4C-MME-T
SST39LF020-45-4C-MME	SST39LF020-45-4C-MME
SST39LF010-45-4C-WHE-T	SST39LF010-45-4C-WHE-T
SST39LF020-45-4C-B3KE	SST39LF020-45-4C-B3KE
SST39LF020-55-4I-MME	SST39LF020-55-4I-MME
SST39LF040-45-4C-B3KE-T	SST39LF040-45-4C-B3KE-T
SST39VF020-70-4I-B3KE	SST39VF020-70-4I-B3KE
SST39VF010-70-4I-B3KE	SST39VF010-70-4I-B3KE
SST39LF020-45-4C-B3KE-T	SST39LF020-45-4C-B3KE-T
SST39LF010-45-4C-MME-T	SST39LF010-45-4C-MME-T
SST39VF020-70-4C-B3KE	SST39VF020-70-4C-B3KE
SST39VF040-70-4C-B3KE-T	SST39VF040-70-4C-B3KE-T
SST39VF010-70-4C-B3KE-T	SST39VF010-70-4C-B3KE-T
SST39LF020-55-4C-MME	SST39LF020-55-4C-MME
SST39LF040-55-4I-B3KE	SST39LF040-55-4I-B3KE

PDF Datasheet Preview
A Microchip Technology Company 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Data Sheet The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash MPF manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write Program or Erase with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. • Organized as 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations 3.0-3.6V for SST39LF010/020/040 2.7-3.6V for SST39VF010/020/040 • Superior Reliability Endurance 100,000 Cycles typical Greater than 100 years Data Retention • Low Power Consumption typical values at 14 MHz Active Current 5 mA typical Standby Current 1 µA typical • Sector-Erase Capability Uniform 4 KByte sectors • Fast Read Access Time 45 ns for SST39LF010/020/040 55 ns for SST39LF020/040 70 ns for SST39VF010/020/040 • Latched Address and Data • Fast Erase and Byte-Program Sector-Erase Time 18 ms typical Chip-Erase Time 70 ms typical Byte-Program Time 14 µs typical Chip Rewrite Time 2 seconds typical for SST39LF/VF010 4 seconds typical for SST39LF/VF020 8 seconds typical for SST39LF/VF040 • Automatic Write Timing Internal VPP Generation • End-of-Write Detection Toggle Bit Data# Polling • CMOS I/O Compatibility • JEDEC Standard Flash EEPROM Pinouts and command sets • Packages Available 32-lead PLCC 32-lead TSOP 8mm x 14mm 48-ball TFBGA 6mm x 8mm 34-ball WFBGA 4mm x 6mm for 1M and 2M • All devices are RoHS compliant 2011 Silicon Storage Technology, Inc. DS25023A 08/11 A Microchip Technology Company 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Product Description Data Sheet The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash MPF manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write Program or Erase with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories. Featuring high performance Byte-Program, the SST39LF010/020/040 and SST39VF010/020/040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, they are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39LF010/020/040 and SST39VF010/020/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improves performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. To meet surface mount requirements, the SST39LF010/020/040 and SST39VF010/020/040 devices are offered in 32-lead PLCC and 32-lead TSOP packages. The SST39LF/VF010 and SST39LF/VF020 are also offered in a 48-ball TFBGA package. See Figures 2, 3, 4, and 5 for pin assignments. 2011 Silicon Storage Technology, Inc. DS25023A 08/11 A Microchip Technology Company Block Diagram 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Data Sheet X-Decoder Product Ordering Information Data Sheet SST 39 VF 010 - 45 - 4C - NHE XX XXX - XX - XX - XXX Environmental Attribute E1 = non-Pb Package Modifier H = 32 leads K = 48 balls M = 34 balls 54 possible positions Package Type B3 = TFBGA 0.8mm pitch, 6mm x 8mm N = PLCC M = WFBGA 0.5mm pitch, 4mm x 6mm W = TSOP type 1, die up, 8mm x 14mm Temperature Range C = Commercial = 0°C to +70°C I = Industrial = -40°C to +85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed 45 = 45 ns 55 = 55 ns 70 = 70 ns Device Density 040 = 4 Mbit 020 = 2 Mbit 010 = 1 Mbit Voltage L = 3.0-3.6V V = 2.7-3.6V Product Series 39 = Multi-Purpose Flash Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are RoHS compliant. 2011 Silicon Storage Technology, Inc. DS25023A 08/11 A Microchip Technology Company 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Valid combinations for SST39LF010 SST39LF010-45-4C-NHE SST39LF010-45-4C-MME SST39LF010-45-4C-WHE Valid combinations for SST39VF010 SST39VF010-70-4C-NHE SST39VF010-70-4C-WHE SST39VF010-70-4I-NHE SST39VF010-70-4I-WHE Valid combinations for SST39LF020 SST39LF020-45-4C-NHE SST39LF020-45-4C-MME SST39LF020-45-4C-WHE SST39LF020-55-4C-NHE SST39LF020-55-4C-WHE Valid combinations for SST39VF020 SST39VF020-70-4C-NHE SST39VF020-70-4C-WHE SST39VF020-70-4I-NHE SST39VF020-70-4I-WHE Valid combinations for SST39LF040 SST39LF040-45-4C-NHE SST39LF040-45-4C-WHE SST39LF040-55-4C-NHE Edited page Valid Combinations on page Changed 39LF040-70-4CB3KE to 39LF040-45-4C-B3KE Removed leaded parts Added package YME Changed endurance from 10,000 to 100,000 in Product Description, page 1 EOL of SST39LF010-45-4C-YME. Replacement part is SST39LF010-454C-MME in this document. Removed all references to the YME package. Date Feb 2000 Aug 2000 Feb 2002 Oct 2002 Mar 2003 Oct 2003 Nov 2003 Dec 2005 Jan 2006 Nov 2008 Feb 2009 Apr 2009 Sep 2009 Jan 2010 Aug 2011 2011 Silicon Storage Technology, Inc. DS25023A 08/11 A Microchip Technology Company 1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040 Data Sheet ISBN:978-1-61341-479-8 2011 Silicon Storage Technology, Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at Memory sizes denote raw storage capacity actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see Silicon Storage Technology, Inc. A Microchip Technology Company 2011 Silicon Storage Technology, Inc. DS25023A 08/11

PDF Datasheet Preview

A Microchip Technology Company
1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040

Data Sheet

The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash MPF manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write Program or Erase with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.
• Organized as 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations 3.0-3.6V for SST39LF010/020/040 2.7-3.6V for SST39VF010/020/040
• Superior Reliability Endurance 100,000 Cycles typical Greater than 100 years Data Retention
• Low Power Consumption typical values at 14 MHz Active Current 5 mA typical Standby Current 1 µA typical
• Sector-Erase Capability Uniform 4 KByte sectors
• Fast Read Access Time 45 ns for SST39LF010/020/040 55 ns for SST39LF020/040 70 ns for SST39VF010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program Sector-Erase Time 18 ms typical Chip-Erase Time 70 ms typical Byte-Program Time 14 µs typical Chip Rewrite Time 2 seconds typical for SST39LF/VF010 4 seconds typical for SST39LF/VF020 8 seconds typical for SST39LF/VF040
• Automatic Write Timing Internal VPP Generation
• End-of-Write Detection Toggle Bit Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard Flash EEPROM Pinouts and command sets
• Packages Available 32-lead PLCC 32-lead TSOP 8mm x 14mm 48-ball TFBGA 6mm x 8mm 34-ball WFBGA 4mm x 6mm for 1M and 2M
• All devices are RoHS compliant
2011 Silicon Storage Technology, Inc.

DS25023A
08/11

A Microchip Technology Company
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040

Product Description

Data Sheet

The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash MPF manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF010/020/040 devices write Program or Erase with a 3.0-3.6V power supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.

Featuring high performance Byte-Program, the SST39LF010/020/040 and SST39VF010/020/040 devices provide a maximum Byte-Program time of 20 µsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, they are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

The SST39LF010/020/040 and SST39VF010/020/040 devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improves performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles.

To meet surface mount requirements, the SST39LF010/020/040 and SST39VF010/020/040 devices are offered in 32-lead PLCC and 32-lead TSOP packages. The SST39LF/VF010 and SST39LF/VF020 are also offered in a 48-ball TFBGA package. See Figures 2, 3, 4, and 5 for pin assignments.
2011 Silicon Storage Technology, Inc.

DS25023A
08/11

A Microchip Technology Company

Block Diagram
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040

Data Sheet

X-Decoder
Product Ordering Information

Data Sheet

SST 39 VF 010 - 45 - 4C - NHE XX XXX - XX - XX - XXX

Environmental Attribute E1 = non-Pb

Package Modifier H = 32 leads K = 48 balls M = 34 balls 54 possible positions

Package Type B3 = TFBGA 0.8mm pitch, 6mm x 8mm N = PLCC M = WFBGA 0.5mm pitch, 4mm x 6mm W = TSOP type 1, die up, 8mm x 14mm

Temperature Range C = Commercial = 0°C to +70°C I = Industrial = -40°C to +85°C

Minimum Endurance 4 = 10,000 cycles

Read Access Speed 45 = 45 ns 55 = 55 ns 70 = 70 ns

Device Density 040 = 4 Mbit 020 = 2 Mbit 010 = 1 Mbit

Voltage L = 3.0-3.6V V = 2.7-3.6V

Product Series 39 = Multi-Purpose Flash

Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are RoHS compliant.
2011 Silicon Storage Technology, Inc.

DS25023A
08/11

A Microchip Technology Company
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040

Valid combinations for SST39LF010

SST39LF010-45-4C-NHE SST39LF010-45-4C-MME

SST39LF010-45-4C-WHE

Valid combinations for SST39VF010

SST39VF010-70-4C-NHE

SST39VF010-70-4C-WHE

SST39VF010-70-4I-NHE

SST39VF010-70-4I-WHE

Valid combinations for SST39LF020

SST39LF020-45-4C-NHE SST39LF020-45-4C-MME

SST39LF020-45-4C-WHE

SST39LF020-55-4C-NHE

SST39LF020-55-4C-WHE

Valid combinations for SST39VF020

SST39VF020-70-4C-NHE

SST39VF020-70-4C-WHE

SST39VF020-70-4I-NHE

SST39VF020-70-4I-WHE

Valid combinations for SST39LF040

SST39LF040-45-4C-NHE

SST39LF040-45-4C-WHE

SST39LF040-55-4C-NHE
Edited page Valid Combinations on page Changed 39LF040-70-4CB3KE to 39LF040-45-4C-B3KE

Removed leaded parts

Added package YME
Changed endurance from 10,000 to 100,000 in Product Description, page 1

EOL of SST39LF010-45-4C-YME. Replacement part is SST39LF010-454C-MME in this document. Removed all references to the YME package.

Date Feb 2000 Aug 2000 Feb 2002 Oct 2002

Mar 2003

Oct 2003 Nov 2003

Dec 2005

Jan 2006 Nov 2008 Feb 2009 Apr 2009 Sep 2009 Jan 2010

Aug 2011
2011 Silicon Storage Technology, Inc.

DS25023A
08/11

A Microchip Technology Company
1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash

SST39LF010 / SST39LF020 / SST39LF040 SST39VF010 / SST39VF020 / SST39VF040

Data Sheet

ISBN:978-1-61341-479-8 2011 Silicon Storage Technology, Microchip Technology Company. All rights reserved.

SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at Memory sizes denote raw storage capacity actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see

Silicon Storage Technology, Inc. A Microchip Technology Company
2011 Silicon Storage Technology, Inc.

DS25023A
08/11

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SST39LF010-45-4C-WHE Datasheet file may be downloaded here without warranties.

Datasheet ID: SST39LF010-45-4C-WHE 648211