Single Cycle Reprogram Erase and Program 4096 Pages 264 Bytes/Page Main Memory<br>• Supports Page and Block Erase Operations<br>• Two 264-byte SRAM Data Buffers Allows Receiving of Data while Reprogramming of Nonvolatile Memory<br>• Continuous Read Capability through Entire Array Ideal for Code Shadowing Applications<br>• Low Power Dissipation 4 mA Active Read Current Typical 2 µA CMOS Standby Current Typical<br>• Hardware Data Protection Feature<br>• 100% Compatible to AT45DB081 and AT45DB081A<br>• 5.0V-tolerant Inputs SI, SCK, CS, RESET and WP Pins<br>• Commercial and Industrial Temperature Ranges
Part | Datasheet |
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AT45DB081B-RI (pdf) |
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AT45DB081B-CC |
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AT45DB081B-CNC |
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PDF Datasheet Preview |
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• Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • 20 MHz Max Clock Frequency • Page Program Operation Single Cycle Reprogram Erase and Program 4096 Pages 264 Bytes/Page Main Memory • Supports Page and Block Erase Operations • Two 264-byte SRAM Data Buffers Allows Receiving of Data while Reprogramming of Nonvolatile Memory • Continuous Read Capability through Entire Array Ideal for Code Shadowing Applications • Low Power Dissipation 4 mA Active Read Current Typical 2 µA CMOS Standby Current Typical • Hardware Data Protection Feature • 100% Compatible to AT45DB081 and AT45DB081A • 5.0V-tolerant Inputs SI, SCK, CS, RESET and WP Pins • Commercial and Industrial Temperature Ranges The AT45DB081B is a 2.5-volt or 2.7-volt only, serial interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. Its 8,650,752 bits of memory are organized as 4096 pages of 264 bytes each. In addition to the main memory, the AT45DB081B also contains two SRAM data buffers of 264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as writing a continuous data stream. 8-megabit 2.5-volt Only or 2.7-volt Only AT45DB081B Pin Configurations Pin Name CS Function Chip Select SCK SI Serial Clock Serial Input Serial Output Hardware Page Write Protect Pin RESET Chip Reset RDY/BUSY Ready/Busy CASON Top View through Package SI 1 SCK 2 RESET 3 8 SO 7 GND 6 VCC 5 WP RDY/BUSY 1 RESET 2 WP 3 NC 4 NC 5 VCC 6 GND 7 NC 8 NC 9 NC 10 CS 11 SCK 12 SI 13 SO 14 TSOP Top View Type 1 28 NC 27 NC 26 NC 25 NC 24 NC 23 NC 22 NC 21 NC 20 NC 19 NC 18 NC 17 NC 16 NC 15 NC SOIC RESET RDY/BUSY CBGA Top View through Package B SCK GND VCC C CS RDY/BSY WP D SO SI RESET Block Diagram Memory Array EEPROM emulation bit or byte alterability is easily handled with a self-contained three step Read-Modify-Write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode 0 and mode The simple serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size and active pin count. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage, and low power are essential. The device operates at clock frequencies up to 20 MHz with a typical active read current consumption of 4 mA. To allow for simple in-system reprogrammability, the AT45DB081B does not require high input voltages for programming. The device operates from a single power supply, 2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The AT45DB081B is enabled through the chip select pin CS and accessed via a three-wire interface consisting of the Serial Input SI , Serial Output SO , and the Serial Clock SCK . All programming cycles are self-timed, and no separate erase cycle is required before programming. When the device is shipped from Atmel, the most significant page of the memory array may not be erased. In other words, the contents of the last page may not be filled with FFH. FLASH MEMORY ARRAY PAGE 264 BYTES SCK CS RESET VCC GND RDY/BUSY BUFFER 1 264 BYTES BUFFER 2 264 BYTES Ordering Information fSCK MHz ICC mA Active Standby Ordering Code AT45DB081B-CC AT45DB081B-CNC AT45DB081B-RC AT45DB081B-TC AT45DB081B-CI AT45DB081B-CNI AT45DB081B-RI AT45DB081B-TI AT45DB081B-CC-2.5 AT45DB081B-CNC-2.5 AT45DB081B-RC-2.5 AT45DB081B-TC-2.5 Package 14C1 8CN3 28R 28T 14C1 8CN3 28R 28T 14C1 8CN3 28R 28T Operation Range Commercial 0°C to 70°C Industrial -40°C to 85°C Commercial 0°C to 70°C 2.5V to 3.6V 14C1 8CN3 28R 28T Package Type 14-ball 3 x 5 Array , Plastic Chip-scale Ball Grid Array CBGA 8-pad 6 mm x 8 mm Chip Array Small Outline No Lead Package CASON 28-lead, Wide, Plastic Gull Wing Small Outline Package SOIC 28-lead, Plastic Thin Small Outline Package TSOP 28 AT45DB081B Packaging Information 14C1 CBGA AT45DB081B Dimensions in Millimeters and Inches . Controlling dimension Millimeters. A1 ID SIDE VIEW TOP VIEW MAX 0.012 MIN NON-ACCUMULATIVE BSC NON-ACCUMULATIVE DIA BALL TYP BOTTOM VIEW TITLE 2325 Orchard Parkway 14C1, 14-ball 3 x 5 Array , x 7 x mm Body, mm Ball R San Jose, CA 95131 Pitch Chip-scale Ball Grid Array Package CBGA 04/11/01 14C1 8CN3 CASON Marked Pin1 Indentifier Top View Side View mm TYP 8 Pin1 Pad Corner Bottom View All dimensions and tolerance conform to ASME Y 14.5M, The surface finish of the package shall be EDM Charmille Unless otherwise specified tolerance Decimal Angular ±2o. Metal Pad Dimensions. SYMBOL A A1 b D E e1 L L1 COMMON DIMENSIONS Unit of Measure = mm BSC REF TYP NOTE 4 |
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