FGA15N120ANTDTU
FGA15N120ANTDTU Datasheet
FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT
| Part | Datasheet |
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FGA15N120ANTDTU |
FGA15N120ANTDTU (pdf) |
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| FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT May 2006 FGA15N120ANTD / FGA15N120ANTD_F109 1200V NPT Trench IGBT • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage VCE sat , typ = 1.9V IC = 15A and TC = 25°C • Low switching loss Eoff, typ = 0.6mJ IC = 15A and TC = 25°C • Extremely enhanced avalanche capability Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. TO-3P Absolute Maximum Ratings VCES VGES IC ICM IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Note 1 Diode Continuous Forward Current Diode Maximum Forward Current TC = 25°C TC = 100°C TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Notes 1 Repetitive rating Pulse width limited by max. junction temperature FGA15N120ANTD 1200 ± 20 30 15 45 15 45 186 74 -55 to +150 -55 to +150 300 Typ. ---- Max. Units V A W °C °C °C Units °C/W °C/W °C/W 2007 Fairchild Semiconductor Corporation FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Package Marking and Ordering Information Device Marking Device FGA15N120ANTD Package TO-3P Reel Size Tape Width Quantity Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current On Characteristics VGE th VCE sat G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Switching Characteristics td on tr td off tf Eon Eoff Ets td on tr td off tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 15A, VGE = 15V, TC = 125°C IC = 30A, VGE = 15V VCE = 30V, VGE = 0V, f = 1MHz VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 15A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600 V, IC = 15A, VGE = 15V ± 250 2650 FGA15N120ANTD/FGA15N120ANTD_F109 1200V NPT Trench IGBT Electrical Characteristics of DIODE TC = 25°C unless otherwise noted Parameter Test Conditions Diode Forward Voltage IF = 15A IF = 15A dI/dt = 200 A/us |
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