AT28C16-15TC

AT28C16-15TC Datasheet

The AT28C16-T is the ideal nonvolatile attribute memory it is a low power, 5-volt-only byte writable nonvolatile memory EEPROM . Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration in-system. Data retention is specified as 10 years minimum, precluding the necessity for batteries. Three access times have been specified to allow for varying layers of buffering between the memory and the PCMCIA interface.

Part	Datasheet
AT28C16-15TC	AT28C16-15TC (pdf)

Related Parts	Information
AT28C16-15TI	AT28C16-15TI

PDF Datasheet Preview
• Ideal Rewritable Attribute Memory • Simple Write Operation Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time - 1 ms 5-Volt-Only Nonvolatile Writes • End of Write Detection RDY/BUSY Output DATA Polling • High Reliability Endurance 100,000 Write Cycles Data Retention 10 Years Minimum • Single 5-Volt Supply for Read and Write • Very Low Power 30 mA Active Current 100 µA Standby Current The AT28C16-T is the ideal nonvolatile attribute memory it is a low power, 5-volt-only byte writable nonvolatile memory EEPROM . Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration in-system. Data retention is specified as 10 years minimum, precluding the necessity for batteries. Three access times have been specified to allow for varying layers of buffering between the memory and the PCMCIA interface. The AT28C16-T is accessed like a Static RAM for read and write operations. During a byte write, the address and data are latched internally. Following the initiation of a write cycle, the device will go to a busy state and automatically write the latched data using an internal control timer. The device provides two methods for detecting the end of a write cycle the RDY/BUSY output and DATA POLLING of I/O7. 16K 2K x 8 PCMCIA Nonvolatile Attribute Memory AT28C16-T Pin Configurations Pin Name A0 - A10 CE OE WE I/O0 - I/O7 RDY/BUSY NC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect OE 1 NC 2 A9 3 A8 4 NC 5 WE 6 VCC 7 RDY/BUSY 8 NC 9 A7 10 A6 11 A5 12 A4 13 A3 14 TSOP Top View 28 A10 27 CE 26 I/O7 25 I/O6 24 I/O5 23 I/O4 22 I/O3 21 GND 20 I/O2 19 I/O1 18 I/O0 17 A0 16 A1 15 A2 Block Diagram Absolute Maximum Ratings* Temperature Under Bias -55°C to +125°C Storage Temperature -65°C to +125°C All Input Voltages including NC Pins with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability AT28C16-T AT28C16-T Device Operation READ The AT28C16-T is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual-line control gives designers increased flexibility in preventing bus contention. BYTE WRITE Writing data into the AT28C16-T is similar to writing into a Static RAM. A low pulse on WE or CE input with OE high and CE or WE low respectively initiates a byte write. The address is latched on the falling edge of WE or CE whichever occurs last and the data is latched on the rising edge of WE or CE whichever occurs first . Once a byte write is started it will automatically time itself to completion. For the AT28C16-T the write cycle time is 1 ms maximum. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. READY/BUSY Pin 1 is an open drain READY/BUSY output that indicates the current status of the self-timed internal write cycle. READY/BUSY is actively pulled low during the write cycle and is released at the completion of the write. The open drain output allows OR-tying of several devices to a common interrupt input. DATA POLLING The AT28C16-T also provides DATA polling to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O7 the other outputs are indeterminate . When the write cycle is finished, true data appears on all outputs. WRITE PROTECTION Inadvertent writes to the device are protected against in the following ways a VCC is below 3.8V typical the write function is inhibited b VCC power on VCC has reached 3.8V the device will automatically time out 5 ms typical before allowing a byte write and c write any one of OE low, CE high or WE high inhibits byte write cycles. CHIP CLEAR The contents of the entire memory of the AT28C16-T may be set to the high state by the Chip Clear operation. By setting CE low and OE to 12V, the chip is cleared when a 10 ms low pulse is applied to WE. DEVICE IDENTIFICATION An extra 32 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 7E0H to 7FFH the additional bytes may be written to or read from in the same manner as the regular memory array. DC and AC Operating Range Operating Temperature Case VCC Power Supply Com. Ind. AT28C16-15T 0°C - 70°C -40°C - 85°C 5V ± 10% Operating Modes Mode Read Write 2 Standby/Write Inhibit Ordering Information tACC ICC mA Active Standby Ordering Code Package Operation Range AT28C16-15TC Commercial 0°C to 70°C AT28C16-15TI Industrial -40°C to 85°C Notes See Valid Part Numbers table below. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the faster 150 ns TAA offering. Valid Part Numbers The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations AT28C16 TC, TI Die Products Reference Section Parallel EEPROM Die Products Package Type 28-Lead, Plastic Thin Small Outline Package TSOP AT28C16-T Packaging Information 28T, 28-Lead, Plastic Thin Small Outline Package TSOP Dimensions in Millimeters and Inches INDEX MARK AREA 0 5 REF *Controlling dimension millimeters AT28C16-T AT28C16-T AT28C16-T Atmel Headquarters Atmel Operations Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 408 441-0311 FAX 408 487-2600 Atmel Colorado Springs 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL 719 576-3300 FAX 719 540-1759 Europe Atmel U.K., Ltd. Coliseum Business Centre Riverside Way Camberley, Surrey GU15 3YL England TEL 44 1276-686677 FAX 44 1276-686697 Atmel Rousset Zone Industrielle 13106 Rousset Cedex, France TEL 33 4 42 53 60 00 FAX 33 4 42 53 60 01 Asia Atmel Asia, Ltd. Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon, Hong Kong TEL 852 27219778 FAX 852 27221369 Japan Atmel Japan K.K. Tonetsu Shinkawa Bldg., 9F 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL 81 3-3523-3551 FAX 81 3-3523-7581 Fax-on-Demand North America 1- 800 292-8635 International 1- 408 441-0732 e-mail Web Site

PDF Datasheet Preview

• Ideal Rewritable Attribute Memory
• Simple Write Operation

Self-Timed Byte Writes On-chip Address and Data Latch for SRAM-like Write Operation Fast Write Cycle Time - 1 ms 5-Volt-Only Nonvolatile Writes
• End of Write Detection RDY/BUSY Output DATA Polling
• High Reliability Endurance 100,000 Write Cycles Data Retention 10 Years Minimum
• Single 5-Volt Supply for Read and Write
• Very Low Power 30 mA Active Current 100 µA Standby Current

The AT28C16-T is the ideal nonvolatile attribute memory it is a low power, 5-volt-only byte writable nonvolatile memory EEPROM . Standby current is typically less than 100 µA. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration in-system. Data retention is specified as 10 years minimum, precluding the necessity for batteries. Three access times have been specified to allow for varying layers of buffering between the memory and the PCMCIA interface.

The AT28C16-T is accessed like a Static RAM for read and write operations. During a byte write, the address and data are latched internally. Following the initiation of a write cycle, the device will go to a busy state and automatically write the latched data using an internal control timer. The device provides two methods for detecting the end of a write cycle the RDY/BUSY output and DATA POLLING of I/O7.
16K 2K x 8 PCMCIA Nonvolatile Attribute Memory

AT28C16-T

Pin Configurations

Pin Name A0 - A10 CE OE WE I/O0 - I/O7 RDY/BUSY NC

Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect

OE 1 NC 2 A9 3 A8 4 NC 5 WE 6 VCC 7 RDY/BUSY 8 NC 9 A7 10 A6 11 A5 12 A4 13 A3 14

TSOP Top View
28 A10 27 CE 26 I/O7 25 I/O6 24 I/O5 23 I/O4 22 I/O3 21 GND 20 I/O2 19 I/O1 18 I/O0 17 A0 16 A1 15 A2

Block Diagram

Absolute Maximum Ratings*

Temperature Under Bias -55°C to +125°C

Storage Temperature -65°C to +125°C

All Input Voltages including NC Pins with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V

Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V
*NOTICE:

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability

AT28C16-T

AT28C16-T

Device Operation

READ The AT28C16-T is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual-line control gives designers increased flexibility in preventing bus contention.

BYTE WRITE Writing data into the AT28C16-T is similar to writing into a Static RAM. A low pulse on WE or CE input with OE high and CE or WE low respectively initiates a byte write. The address is latched on the falling edge of WE or CE whichever occurs last and the data is latched on the rising edge of WE or CE whichever occurs first . Once a byte write is started it will automatically time itself to completion. For the AT28C16-T the write cycle time is 1 ms maximum. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation.

READY/BUSY Pin 1 is an open drain READY/BUSY output that indicates the current status of the self-timed internal write cycle. READY/BUSY is actively pulled low during the write cycle and is released at the completion of the write. The open drain output allows OR-tying of several devices to a common interrupt input.

DATA POLLING The AT28C16-T also provides DATA polling to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O7 the other outputs are indeterminate . When the write cycle is finished, true data appears on all outputs.

WRITE PROTECTION Inadvertent writes to the device are protected against in the following ways a VCC is below 3.8V typical the write function is inhibited b VCC power on VCC has reached 3.8V the device will automatically time out 5 ms typical before allowing a byte write and c write any one of OE low, CE high or WE high inhibits byte write cycles.

CHIP CLEAR The contents of the entire memory of the AT28C16-T may be set to the high state by the Chip Clear operation. By setting CE low and OE to 12V, the chip is cleared when a 10 ms low pulse is applied to WE.

DEVICE IDENTIFICATION An extra 32 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 7E0H to 7FFH the additional bytes may be written to or read from in the same manner as the regular memory array.

DC and AC Operating Range

Operating Temperature Case

VCC Power Supply

Com. Ind.

AT28C16-15T 0°C - 70°C -40°C - 85°C 5V ± 10%

Operating Modes

Mode

Read

Write 2

Standby/Write Inhibit
Ordering Information
tACC

ICC mA

Active Standby
Ordering Code

Package

Operation Range

AT28C16-15TC

Commercial 0°C to 70°C

AT28C16-15TI

Industrial -40°C to 85°C

Notes See Valid Part Numbers table below.

The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the faster 150 ns TAA offering.

Valid Part Numbers

The following table lists standard Atmel products that can be ordered.

Device Numbers

Speed

Package and Temperature Combinations

AT28C16

TC, TI

Die Products

Reference Section Parallel EEPROM Die Products

Package Type
28-Lead, Plastic Thin Small Outline Package TSOP

AT28C16-T

Packaging Information
28T, 28-Lead, Plastic Thin Small Outline Package TSOP Dimensions in Millimeters and Inches *

INDEX MARK AREA
0 5 REF
*Controlling dimension millimeters

AT28C16-T

AT28C16-T

AT28C16-T

Atmel Headquarters

Atmel Operations

Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 408 441-0311 FAX 408 487-2600

Atmel Colorado Springs 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL 719 576-3300 FAX 719 540-1759

Europe Atmel U.K., Ltd. Coliseum Business Centre Riverside Way Camberley, Surrey GU15 3YL England TEL 44 1276-686677 FAX 44 1276-686697

Atmel Rousset Zone Industrielle 13106 Rousset Cedex, France TEL 33 4 42 53 60 00 FAX 33 4 42 53 60 01

Asia Atmel Asia, Ltd. Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon, Hong Kong TEL 852 27219778 FAX 852 27221369

Japan Atmel Japan K.K. Tonetsu Shinkawa Bldg., 9F 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL 81 3-3523-3551 FAX 81 3-3523-7581

Fax-on-Demand North America 1- 800 292-8635

International 1- 408 441-0732
e-mail

Web Site

More datasheets: 460 | KSC441V2SPDLFS | KSC421V270SHLFS | ITR20004 | FDS9933 | 17801-S06 | 204-10UYC/S400-A6 | 450-20-0148 | 710-00-0042 | 2102-4-7320

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Datasheet ID: AT28C16-15TC 518968