FDS9933

FDS9933 Datasheet

FDS9933

Part	Datasheet
FDS9933	FDS9933 (pdf)

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FDS9933 September 2006 FDS9933 Dual P-Channel 2.5V Specified MOSFET This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . • Load switch • Motor drive • DC/DC conversion • Power management • A, V, RDS ON = 55 VGS = V RDS ON = 90 VGS = V • Extended VGSS range ±12V for battery applications • Low gate charge • High performance trench technology for extremely low RDS ON • High power and current handling capability DD1 DD2 SO-8 Pin 1 SO-8 SS2GS2SS1GG1 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 9933 FDS9933 13’’ 2006 Fairchild Semiconductor International Ratings ±12 2 1 to +175 78 40 Tape width 12mm Units °C/W °C/W Quantity 2500 units FDS9933 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 0 V VGS = ±12 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on Drain Current Forward Transconductance

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FDS9933

September 2006

FDS9933

Dual P-Channel 2.5V Specified MOSFET

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V .
• Load switch
• Motor drive
• DC/DC conversion
• Power management
• A, V, RDS ON = 55 VGS = V RDS ON = 90 VGS = V
• Extended VGSS range ±12V for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability

DD1 DD2

SO-8

Pin 1 SO-8

SS2GS2SS1GG1

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation

Note 1a Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size
9933

FDS9933
13’’
2006 Fairchild Semiconductor International

Ratings
±12
2 1 to +175
78 40

Tape width 12mm

Units
°C/W °C/W

Quantity 2500 units

FDS9933

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V, ID = µA ID = µA, Referenced to 25°C

VDS = V, VGS = 0 V VGS = ±12 V, VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

Drain Current

Forward Transconductance

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Datasheet ID: FDS9933 514389