MAPR-002731-115M00
MAPR-002731-115M00 Datasheet
MAPR-002731-115M00
| Part | Datasheet |
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MAPR-002731-115M00 |
MAPR-002731-115M00 (pdf) |
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| MAPR-002731-115M00 Radar Pulsed Power Transistor 115W, GHz, 200µs Pulse, 10% Duty • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization system • Internal input and output impedance matching • Hermetic metal/ceramic package • RoHS compliant • Device marked as PR2731-115M M/A-COM Products PRELIMINARY, 10 Aug 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Power Dissipation +25°C Storage Temperature Junction Temperature VCES VEBO IC PTOT TSTG Rating 65 TBD -65 to +200 Units V A W °C °C Electrical Specifications TC = 25 ± 5°C Room Ambient Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 40mA Collector-Emitter Leakage Current VCE = 36V Thermal Resistance Vcc = 36V, Pin = 20W Output Power Vcc = 36V, Pin = 20W Power Gain Vcc = 36V, Pin = 20W Gain Flatness Vcc = 36V, Pin = 20W Collector Efficiency Vcc = 36V, Pin = 20W Pulse Droop Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Vcc = 36V, Pin = 20W Vcc = 36V, Pin = 20W Vcc = 36V, Pin = 20W Vcc = 36V, Pin = 20W Frequency F = GHz F = GHz F = GHz F = GHz F = GHz F = GHz F = GHz F = GHz F = GHz Symbol Min BVCES ICES RTH JC POUT Droop VSWR-T VSWR-S Max Units |
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