MAGX-003135-120L00
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MAGX-003135-SB4PPR (pdf) |
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MAGX-003135-120L00 |
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MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, to GHz, 300 us Pulse, 10% Duty • GaN on SiC Depletion-Mode HEMT Transistor • Common-Source Configuration • Broadband Class AB Operation • Thermally Enhanced Cu/Mo/Cu Package • RoHS* Compliant • +50 V Typical Operation • MTTF = 600 Years TJ < 200°C • 3A001.b.3.a.3 Export Classification • MSL-1 The MAGX-003135-120L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between - GHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-003135-120L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number MAGX-003135-120L00 MAGX-003135-SB4PPR 120 W GaN Power Transistor GHz Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, to GHz, 300 us Pulse, 10% Duty Electrical Specifications Freq. = - GHz, TA = 25°C Parameter Min. Typ. Max. RF Functional Tests PIN = 10 W, VDD = 50 V, IDQ = 300 mA, Pulse Width = 300 µs, Duty = 10% Peak Output Power Gain Drain Efficiency Load Mismatch Stability POUT VSWR-S Load Mismatch Tolerance VSWR-T 10:1 Units W dB % - Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 23 mA VDS = 5 V, ID = 9 A Dynamic Characteristics Input Capacitance Not Applicable Input Matched VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz IDS VGS TH CISS COSS CRSS Min. N/A - Typ. Max. Units M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: |
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