MAGX-003135-120L00

MAGX-003135-120L00 Datasheet

MAGX-003135-120L00

Part	Datasheet
MAGX-003135-120L00	MAGX-003135-120L00 (pdf)

Related Parts	Information
MAGX-003135-SB4PPR	MAGX-003135-SB4PPR

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MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, to GHz, 300 us Pulse, 10% Duty • GaN on SiC Depletion-Mode HEMT Transistor • Common-Source Configuration • Broadband Class AB Operation • Thermally Enhanced Cu/Mo/Cu Package • RoHS* Compliant • +50 V Typical Operation • MTTF = 600 Years TJ < 200°C • 3A001.b.3.a.3 Export Classification • MSL-1 The MAGX-003135-120L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between - GHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-003135-120L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information Part Number MAGX-003135-120L00 MAGX-003135-SB4PPR 120 W GaN Power Transistor GHz Evaluation Board * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, to GHz, 300 us Pulse, 10% Duty Electrical Specifications Freq. = - GHz, TA = 25°C Parameter Min. Typ. Max. RF Functional Tests PIN = 10 W, VDD = 50 V, IDQ = 300 mA, Pulse Width = 300 µs, Duty = 10% Peak Output Power Gain Drain Efficiency Load Mismatch Stability POUT VSWR-S Load Mismatch Tolerance VSWR-T 10:1 Units W dB % - Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 23 mA VDS = 5 V, ID = 9 A Dynamic Characteristics Input Capacitance Not Applicable Input Matched VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz IDS VGS TH CISS COSS CRSS Min. N/A - Typ. Max. Units M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit:

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MAGX-003135-120L00

GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, to GHz, 300 us Pulse, 10% Duty
• GaN on SiC Depletion-Mode HEMT Transistor
• Common-Source Configuration
• Broadband Class AB Operation
• Thermally Enhanced Cu/Mo/Cu Package
• RoHS* Compliant
• +50 V Typical Operation
• MTTF = 600 Years TJ < 200°C
• 3A001.b.3.a.3 Export Classification
• MSL-1

The MAGX-003135-120L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between - GHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-003135-120L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information

Part Number MAGX-003135-120L00 MAGX-003135-SB4PPR
120 W GaN Power Transistor

GHz Evaluation Board
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-003135-120L00

GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, to GHz, 300 us Pulse, 10% Duty

Electrical Specifications Freq. = - GHz, TA = 25°C

Parameter

Min.

Typ.

Max.

RF Functional Tests PIN = 10 W, VDD = 50 V, IDQ = 300 mA, Pulse Width = 300 µs, Duty = 10%

Peak Output Power Gain Drain Efficiency Load Mismatch Stability

POUT

VSWR-S

Load Mismatch Tolerance

VSWR-T
10:1

Units

W dB % -

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance

VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 23 mA VDS = 5 V, ID = 9 A

Dynamic Characteristics

Input Capacitance

Not Applicable Input Matched

VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz

IDS VGS TH

CISS COSS CRSS

Min.

N/A -

Typ.

Max. Units

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-003135-120L00 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-003135-120L00 646889