MAGX-002731-030L00

MAGX-002731-030L00 Datasheet

MAGX-002731-030L00

Part	Datasheet
MAGX-002731-030L00	MAGX-002731-030L00 (pdf)

PDF Datasheet Preview
MAGX-002731-030L00 GaN HEMT Pulsed Power Transistor - GHz, 30W Peak, 500us Pulse, 10% Duty Cycle • GaN depletion mode HEMT microwave transistor • Common source configuration • Broadband Class AB operation • Thermally enhanced Cu/Mo/Cu package • RoHS Compliant • +50V Typical Operation • MTTF of 114 years Channel Temperature < 200°C Application • Civilian and Military Pulsed Radar Production V1 23 Aug 11 Product Description The MAGX-002731-030L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-030L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information MAGX-002731-030L00 MAGX-002731-SB1PPR 30W GaN Power Transistor Evaluation Fixture Typical RF Performance Freq Pin Pout Gain Id-Pk Eff W Peak W Peak 2700 3 2900 3 3100 3 46 56 43 53 41 56 Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows Vdd=50V, Idq=250mA pulsed , GHz, Pulse=500us, Duty=10%. ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: Visit for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product s or information contained herein without notice. MAGX-002731-030L00 GaN HEMT Pulsed Power Transistor - GHz, 30W Peak, 500us Pulse, 10% Duty Cycle Production V1 23 Aug 11 Absolute Maximum Ratings Table 1, 2, 3 Supply Voltage Vdd +65V Supply Voltage Vgg -8 to 0V Supply Current Id1 3000 mA Input Power Pin +30 dBm Absolute Max. Junction/Channel Temp 200 ºC Continuous Power Dissipation Pdiss at 85 ºC Pulsed Power Dissipation Pavg at 85 ºC MTTF TJ<200°C 114 years Thermal Resistance, Tchannel = 200 ºC Pulsed 500uS, 10% Duty cycle ºC/W Operating Temp -40 to +95C Storage Temp -65 to +150C Mounting Temperature See solder reflow profile

PDF Datasheet Preview

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor - GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
• GaN depletion mode HEMT microwave transistor
• Common source configuration
• Broadband Class AB operation
• Thermally enhanced Cu/Mo/Cu package
• RoHS Compliant
• +50V Typical Operation
• MTTF of 114 years Channel Temperature < 200°C

Application
• Civilian and Military Pulsed Radar

Production V1 23 Aug 11

Product Description

The MAGX-002731-030L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military radar pulsed applications between 2700 - 3100 MHz. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-002731-030L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information

MAGX-002731-030L00 MAGX-002731-SB1PPR
30W GaN Power Transistor Evaluation Fixture

Typical RF Performance

Freq Pin Pout Gain Id-Pk Eff

W Peak

W Peak
2700 3 2900 3 3100 3
46 56 43 53 41 56

Typical RF performance measured in M/A-COM RF test fixture. Devices tested in common source Class-AB configuration as follows Vdd=50V, Idq=250mA pulsed , GHz, Pulse=500us, Duty=10%.

ADVANCED Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

Visit for additional data sheets and product information.

M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product s or information contained herein without notice.

MAGX-002731-030L00

GaN HEMT Pulsed Power Transistor - GHz, 30W Peak, 500us Pulse, 10% Duty Cycle

Production V1 23 Aug 11

Absolute Maximum Ratings Table 1, 2, 3

Supply Voltage Vdd
+65V

Supply Voltage Vgg
-8 to 0V

Supply Current Id1
3000 mA

Input Power Pin
+30 dBm

Absolute Max. Junction/Channel Temp
200 ºC

Continuous Power Dissipation Pdiss at 85 ºC

Pulsed Power Dissipation Pavg at 85 ºC

MTTF TJ<200°C
114 years

Thermal Resistance, Tchannel = 200 ºC Pulsed 500uS, 10% Duty cycle
ºC/W

Operating Temp
-40 to +95C

Storage Temp
-65 to +150C

Mounting Temperature

See solder reflow profile

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-002731-030L00 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-002731-030L00 646886