IPB03N03LB G
IPB03N03LB G Datasheet
IPB03N03LB
| Part | Datasheet |
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IPB03N03LB G |
IPB03N03LB G (pdf) |
| Related Parts | Information |
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IPB03N03LB |
IPB03N03LB |
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| Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application • N-channel - Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating RoHS compliant Product Summary V DS R DS on ,max ID IPB03N03LB 30 V 80 A PG-TO22603-3-1 Type IPB03N03LB Package P-TO263-3 Marking 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=80 A, R GS=25 dv /dt I D=80 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 Value 80 320 580 ±20 150 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2006-05-10 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5 IPB03N03LB |
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