MAGX-001090-600L0S
MAGX-001090-600L0S Datasheet
MAGX-001090-600L0x
| Part | Datasheet |
|---|---|
MAGX-001090-600L0S |
MAGX-001090-600L0S (pdf) |
| Related Parts | Information |
|---|---|
MAGX-A11090-600L00 |
MAGX-A11090-600L00 |
MAGX-001090-600L00 |
MAGX-001090-600L00 |
| PDF Datasheet Preview |
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| MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 us Pulse, 2% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260 °C Reflow Compatible • +50 V Typical Operation • MTTF = 600 years TJ < 200 °C • Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S avionics. • Military Radar for IFF and Data Links. The MAGX-001090-600L00 and MAGX-001090-600L0S are gold metalized matched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor optimized for pulsed avionics and radar applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. MAGX-001090-600L00 MAGX-001090-600L0S Ordering Information1 MAGX-001090-600L00 Flanged MAGX-001090-600L0S Flangeless MAGX-A11090-600L00 1030 - 1090 MHz Evaluation Board When ordering the evaluation board, please indicate on sales order notes if it will be used for A. Standard Flange devices B. Earless Flange devices Typical RF Performance under Standard Operating Conditions, POUT = 600 W Peak Freq Gain Eff. Droop +1dB OD VSWR-S VSWR-T 1030 1090 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-001090-600L0x GaN on SiC HEMT Pulsed Power Transistor 600 W Peak, 1030 to 1090 MHz, 32 us Pulse, 2% Duty Electrical Specifications Freq. = 1030 - 1090 MHz, TA = 25 °C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests Peak Input Power Power Gain Drain Efficiency Pulse Droop VDD = 50 V, IDQ = 600 mA, Pulse Width = 32 us, Duty Cycle = 2%, POUT = 600 W Peak 12 W avg. Droop Load Mismatch Stability VSWR-S - Load Mismatch Tolerance Mode-S ELM Pulse Width Conditions2 VSWR-T - Peak Input Power Gain Drain Efficiency VDD = 50 V, IDQ = 400 mA, 48 pulses of 32 µs on and 18 µs off, repeat every 24 ms, Overall Duty Factor = POUT = 550 W Peak W avg. For Mode-S ELM pulse conditions power measurements are obtained as follows RF input / output power is measured at the middle of the 25th pulse in the burst t = ms Droop measurements are defined as the drop in power from the 5th pulse t = 216us and 43rd pulse t = 2.116ms in the burst. Electrical Characteristics TA = 25 °C Parameter Test Conditions DC Characteristics |
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