MAGX-000245-025000
MAGX-000245-025000 Datasheet
MAGX-000245-025000
| Part | Datasheet |
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MAGX-000245-025000 |
MAGX-000245-025000 (pdf) |
| Related Parts | Information |
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MAGX-S00245-025000 |
MAGX-S00245-025000 |
| PDF Datasheet Preview |
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| MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power • GaN on SiC Depletion Mode Transistor • Common-Source Configuration • Broadband Class AB Operation • Thermally Enhanced Cu/Mo/Cu Package • RoHS* Compliant • +28V Typical Operation • MTTF = 600 years TJ < 200°C Primary Applications • RF Lighting • RF Plasma Generation • RF Heating • RF Drying • Material Processing • Power Industrial Equipment • ISM • Broadcast • MILCOM • Datalinks • Air Traffic Control Radar - Commercial • Weather Radar - Commercial • Military Radar - Military The MAGX-000245-025000 is a gold metalized unmatched Gallium Nitride GaN on Silicon Carbide SiC RF power transistor suitable for CW applications centered at 2.45GHz for application in ISM/Broadcast/Plasma applications. This product differentiates itself from other GaN power transistors in that it runs well in CW. The matching network is compact and small. The frequency of operation covers DC - GHz which captures commercial as well as military applications. This product is designed as a high power driver amplifier or final stage depending on the application. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. The MAGX-000245-025000 is constructed using a thermally enhanced Cu/Mo/ Cu flanged ceramic package which provides excellent thermal performance. MAGX-000245-025000 Ordering Information Part Number MAGX-000245-025000 Description Bulk Packaging MAGX-S00245-025000 Sample Board GHz 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: MAGX-000245-025000 GaN on SiC HEMT Power Transistor 25 W, DC-2.5 GHz, CW Power Electrical Specifications1 Freq. = 2450 MHz, TA = 25°C Parameter Test Conditions Symbol Min. RF Functional Tests VDD = +28 V, IDQ = 100 mA, CW Operation Input Power Pout= 25 W Power Gain Pout= 25 W Drain Efficiency Pout= 25 W Load Mismatch Stability Pout= 25 W Load Mismatch Tolerance Pout= 25 W Pin GP ηD VSWR-S VSWR-T Typ. 12 62 5:1 10:1 Max. Units Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 6 mA VDS = 5 V, ID = 1500 mA VDS = 0 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz IDS VGS TH CISS COSS CRSS Min. Typ. |
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