MAGX-000040-00500P

MAGX-000040-00500P Datasheet

MAGX-000040-00500P

Part	Datasheet
MAGX-000040-00500P	MAGX-000040-00500P (pdf)

Related Parts	Information
MAGX-000040-SB2PPR	MAGX-000040-SB2PPR

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MAGX-000040-00500P GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package DC - GHz • GaN on SiC D-Mode Transistor Technology • Common-Source Configuration • Unmatched, Coupled DC and RF • Ideal for Pulsed and CW Applications up to 50 V • 50 V Typical Bias, Class AB • Excellent Thermal Resistance • Thermally-Enhanced Plastic SOT-89 Package • MTTF = 600 years TJ < 200°C • Halogen-Free “Green” Mold Compound • RoHS* Compliant and 260°C Reflow Compatible • MSL1 The MAGX-000040-00500P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall transistor size, cost and weight in a “TRUE SMT”TM plastic package. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Functional Schematic Ordering Information1 Package MAGX-000040-00500P Bulk Packaging MAGX-000040-0050TP 500 Piece Reel MAGX-000040-SB2PPR Sample Board Reference Application Note M513 for reel size information. Pin Configuration Pin No. 1 2 3 4 Function VGG/RFIN GND VDD/RFOUT * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: MAGX-000040-00500P GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package DC - GHz Typical Narrowband RF Performance2 VDD = 50 V, IDQ = 17 mA, TA = 25°C Parameter 1 GHz Units Linear Gain Pulsed Peak Output Power P3dB Pulsed Power Gain P3dB Drain Efficiency P3dB Device optimally matched in narrowband load-pull test system. Electrical Specifications3 Freq. = GHz, VDD = 50 V, IDQ = 17 mA, TA = 25°C, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. Units RF FUNCTIONAL TESTS Pulse Width = 1 ms, 10% Duty Cycle Pulsed Peak Output Power PIN = W Peak POUT Pulsed Power Gain Pulsed Drain Efficiency Load Mismatch Stability Load Mismatch Tolerance RF FUNCTIONAL TESTS CW PIN = W Peak PIN = W Peak PIN = W Peak PIN = W Peak VSWR-S - VSWR-T - 10:1 CW Output Power

PDF Datasheet Preview

MAGX-000040-00500P

GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package DC - GHz
• GaN on SiC D-Mode Transistor Technology
• Common-Source Configuration
• Unmatched, Coupled DC and RF
• Ideal for Pulsed and CW Applications up to 50 V
• 50 V Typical Bias, Class AB
• Excellent Thermal Resistance
• Thermally-Enhanced Plastic SOT-89 Package
• MTTF = 600 years TJ < 200°C
• Halogen-Free “Green” Mold Compound
• RoHS* Compliant and 260°C Reflow Compatible
• MSL1

The MAGX-000040-00500P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall transistor size, cost and weight in a “TRUE SMT”TM plastic package.

Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components.

Functional Schematic
Ordering Information1

Package

MAGX-000040-00500P

Bulk Packaging

MAGX-000040-0050TP
500 Piece Reel

MAGX-000040-SB2PPR

Sample Board

Reference Application Note M513 for reel size information.

Pin Configuration

Pin No. 1 2 3 4

Function VGG/RFIN

GND VDD/RFOUT
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

MAGX-000040-00500P

GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package DC - GHz

Typical Narrowband RF Performance2 VDD = 50 V, IDQ = 17 mA, TA = 25°C

Parameter
1 GHz

Units

Linear Gain

Pulsed Peak Output Power P3dB

Pulsed Power Gain P3dB

Drain Efficiency P3dB

Device optimally matched in narrowband load-pull test system.

Electrical Specifications3 Freq. = GHz, VDD = 50 V, IDQ = 17 mA, TA = 25°C, Z0 = 50 Ω

Parameter

Test Conditions

Symbol Min. Typ. Max. Units

RF FUNCTIONAL TESTS Pulse Width = 1 ms, 10% Duty Cycle

Pulsed Peak Output Power

PIN = W Peak

POUT

Pulsed Power Gain Pulsed Drain Efficiency Load Mismatch Stability Load Mismatch Tolerance RF FUNCTIONAL TESTS CW

PIN = W Peak PIN = W Peak PIN = W Peak PIN = W Peak

VSWR-S -

VSWR-T -
10:1

CW Output Power

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000040-00500P Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000040-00500P 646872