IRGP4063-EPBF
IRGP4063-EPBF Datasheet
IRGP4063PbF IRGP4063-EPbF
| Part | Datasheet |
|---|---|
IRGP4063-EPBF |
IRGP4063-EPBF (pdf) |
| Related Parts | Information |
|---|---|
IRGP4063PBF |
IRGP4063PBF |
| PDF Datasheet Preview |
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| PD - 97404 INSULATED GATE BIPOLAR TRANSISTOR • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 uS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE ON Temperature co-efficient • Tight parameter distribution • Lead Free Package IRGP4063PbF IRGP4063-EPbF n-channel VCES = 600V IC = 48A, TC = 100°C tSC 5us, TJ max = 175°C VCE on typ. = 1.65V • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE ON and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI TO-247AC IRGP4063PbF TO-247AD IRGP4063-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C ICM ILM VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC = 25°C PD TC = 100°C TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter IGBT Thermal Resistance Junction-to-Case- each IGBT Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount Max. 600 48 144 192 ±20 ±30 330 170 -55 to +175 300 in. 1.6mm from case 10 lbf•in N•m Min. Typ. Max. 40 Units V Units °C/W 06/30/09 IRGP4063PbF/IRGP4063-EPbF Electrical Characteristics TJ = 25°C unless otherwise specified V BR CES Parameter Collector-to-Emitter Breakdown Voltage Min. Typ. Max. Units Conditions |
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