MAGX-000035-PB2PPR

MAGX-000035-PB2PPR Datasheet


MAGX-000035-05000P

Part Datasheet
MAGX-000035-PB2PPR MAGX-000035-PB2PPR MAGX-000035-PB2PPR (pdf)
Related Parts Information
MAGX-000035-05000P MAGX-000035-05000P MAGX-000035-05000P
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MAGX-000035-05000P

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - GHz
• GaN on SiC D-Mode Transistor Technology
• Unmatched, Ideal for Pulsed Applications
• 50 V Typical Bias, Class AB
• Common-Source Configuration
• Thermally-Enhanced 3 x 6 mm 14-Lead DFN
• MTTF = 600 years TJ < 200°C
• Halogen-Free “Green” Mold Compound
• RoHS* Compliant and 260°C Reflow Compatible
• MSL-1

The MAGX-000035-05000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.

Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components.
Ordering Information1,2

Package

Functional Schematic
12 34 56 7

NC GG
15 DD

MAGX-000035-05000P MAGX-000035-0500TP

Bulk Packaging 250 Piece Reel
14 13 12 11 10 9 8

Pin Configuration3

MAGX-000035-PB2PPR

Sample Board

Pin No. Function Pin No. Function
Reference Application Note M513 for reel size information. When ordering sample evaluation boards, choose a standard
frequency range indicated on page 4 or specify a desired custom range. Custom requests may increase lead times.

No Connection

No Connection

No Connection

No Connection

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

No Connection

No Connection
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

No Connection

No Connection

Paddle4

MACOM recommends connecting unused package pins to ground.

The exposed pad centered on the package bottom must be connected to RF and DC ground.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000035-05000P

GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - GHz

Typical Performance5 VDD = 50 V, IDQ = 100 mA, TA = 25°C

Parameter
30 MHz
1 GHz

Units

Gain

Saturated Power PSAT

Power Gain at PSAT

PAE PSAT

Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on page

Electrical Specifications Freq. = GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω

Parameter

Test Conditions

Symbol Min. Typ. Max.

RF FUNCTIONAL TESTS

CW Output Power P2.5 dB

Pulsed Output Power P2.5 dB 1 ms and 10% Duty Cycle
More datasheets: CDLL4125 | CDLL4124 | CDLL4123 | CDLL4122 | CDLL4105 | CDLL4106 | 76650-0123 | 58389-001 | MK16-B-2 | HY 30-P


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000035-PB2PPR Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000035-PB2PPR 646870