MAGX-000035-05000P
Part | Datasheet |
---|---|
![]() |
MAGX-000035-05000P (pdf) |
Related Parts | Information |
---|---|
![]() |
MAGX-000035-PB2PPR |
PDF Datasheet Preview |
---|
MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - GHz • GaN on SiC D-Mode Transistor Technology • Unmatched, Ideal for Pulsed Applications • 50 V Typical Bias, Class AB • Common-Source Configuration • Thermally-Enhanced 3 x 6 mm 14-Lead DFN • MTTF = 600 years TJ < 200°C • Halogen-Free “Green” Mold Compound • RoHS* Compliant and 260°C Reflow Compatible • MSL-1 The MAGX-000035-05000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Ordering Information1,2 Package Functional Schematic 12 34 56 7 NC GG 15 DD MAGX-000035-05000P MAGX-000035-0500TP Bulk Packaging 250 Piece Reel 14 13 12 11 10 9 8 Pin Configuration3 MAGX-000035-PB2PPR Sample Board Pin No. Function Pin No. Function Reference Application Note M513 for reel size information. When ordering sample evaluation boards, choose a standard frequency range indicated on page 4 or specify a desired custom range. Custom requests may increase lead times. No Connection No Connection No Connection No Connection VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT No Connection No Connection * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. No Connection No Connection Paddle4 MACOM recommends connecting unused package pins to ground. The exposed pad centered on the package bottom must be connected to RF and DC ground. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000035-05000P GaN Wideband 50 W Pulsed Transistor in Plastic Package DC - GHz Typical Performance5 VDD = 50 V, IDQ = 100 mA, TA = 25°C Parameter 30 MHz 1 GHz Units Gain Saturated Power PSAT Power Gain at PSAT PAE PSAT Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on page Electrical Specifications Freq. = GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. RF FUNCTIONAL TESTS CW Output Power P2.5 dB Pulsed Output Power P2.5 dB 1 ms and 10% Duty Cycle |
More datasheets: CDLL4124 | CDLL4123 | CDLL4122 | CDLL4105 | CDLL4106 | 76650-0123 | 58389-001 | MK16-B-2 | HY 30-P | MAGX-000035-PB2PPR |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000035-05000P Datasheet file may be downloaded here without warranties.