MAGX-000035-010000

MAGX-000035-010000 Datasheet

MAGX-000035-010000 MAGX-000035-01000S

Part	Datasheet
MAGX-000035-010000	MAGX-000035-010000 (pdf)

Related Parts	Information
MAGX-000035-SB2PPR	MAGX-000035-SB2PPR
MAGX-000035-SB3PPR	MAGX-000035-SB3PPR
MAGX-000035-01000S	MAGX-000035-01000S

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MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - GHz • GaN Depletion-Mode HEMT Microwave Transistor • Common-Source configuration • No internal matching • Broadband Class AB operation • RoHS* Compliant • +50 V Typical Operation • MTTF = 600 years The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions compared with older semiconductor technologies. AOprpdleicriantgioInnsformation1,2 General purpose for pulsed or CW applications • Commercial Wireless Infrastructure WCDMA, LTE, WIMAX • Civilian and Military Radar • Military and Commercial Communications • Public Radio • Industrial, Scientific and Medical • SATCOM • Instrumentation • Avionics MAGX-000035-010000 Flanged MAGX-000035-01000S Flangeless Ordering Information Part Number MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR Package 10 W GaN Power Transistor Flanged 10 W GaN Power Transistor Flangeless GHz Evaluation Board Flanged GHz Evaluation Board Flangeless * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - GHz Absolute Maximum Ratings1, 2, 3 Parameter Supply Voltage VDD Supply Voltage VGG Supply Current IDD Input Power PIN Junction/Channel Temp MTTF TJ < 200 °C Continuous Power Dissipation PDISS at 85 ºC Pulsed Power Dissipation PAVG at 85 ºC Thermal Resistance, TJ = 200 ºC , CW Thermal Resistance, TJ = 200 ºC , Pulsed 500 us, 10% Duty cycle Operating Temp Storage Temp ESD Min. - Charged Device Model CDM ESD Min. - Human Body Model HBM Limit +65 V -8 to 0 V 800 mA 25 dBm 200ºC 600 years 18 W 43 W ºC/W ºC/W -40 to +95ºC -65 to +150ºC 250 V 250 V Exceeding any one or combination of these limits may cause permanent damage to this device Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. For saturated performance it is recommended that the sum of 3*Vdd + abs Vgg <175 V. DC Characteristics Parameter Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Test Conditions VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 2 mA VDS = 5 V, ID = 500 mA Symbol IDS VGS TH GM Min. -5 Typ. -3 - Max. Units mA V S DC Characteristics Test Conditions VDS = 0 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz Symbol Min. CISS COSS CRSS Typ. Max. - Units pF M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - GHz Electrical Specifications TA = 25 ºC

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MAGX-000035-010000 MAGX-000035-01000S

GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - GHz
• GaN Depletion-Mode HEMT Microwave Transistor
• Common-Source configuration
• No internal matching
• Broadband Class AB operation
• RoHS* Compliant
• +50 V Typical Operation
• MTTF = 600 years

The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.

The MAGX-000035-01000X is constructed with either a flanged or flangeless ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions compared with older semiconductor technologies.

AOprpdleicriantgioInnsformation1,2

General purpose for pulsed or CW applications
• Commercial Wireless Infrastructure WCDMA,

LTE, WIMAX
• Civilian and Military Radar
• Military and Commercial Communications
• Public Radio
• Industrial, Scientific and Medical
• SATCOM
• Instrumentation
• Avionics

MAGX-000035-010000 Flanged

MAGX-000035-01000S Flangeless
Ordering Information

Part Number MAGX-000035-010000 MAGX-000035-01000S MAGX-000035-SB2PPR MAGX-000035-SB3PPR

Package
10 W GaN Power Transistor Flanged
10 W GaN Power Transistor Flangeless

GHz Evaluation Board Flanged

GHz Evaluation Board Flangeless
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

MAGX-000035-010000 MAGX-000035-01000S

GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - GHz

Absolute Maximum Ratings1, 2, 3

Parameter

Supply Voltage VDD Supply Voltage VGG Supply Current IDD Input Power PIN Junction/Channel Temp MTTF TJ < 200 °C Continuous Power Dissipation PDISS at 85 ºC Pulsed Power Dissipation PAVG at 85 ºC Thermal Resistance, TJ = 200 ºC , CW Thermal Resistance, TJ = 200 ºC , Pulsed 500 us, 10% Duty cycle Operating Temp

Storage Temp ESD Min. - Charged Device Model CDM ESD Min. - Human Body Model HBM

Limit +65 V -8 to 0 V 800 mA 25 dBm 200ºC 600 years 18 W 43 W ºC/W ºC/W -40 to +95ºC -65 to +150ºC 250 V 250 V

Exceeding any one or combination of these limits may cause permanent damage to this device Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. For saturated performance it is recommended that the sum of 3*Vdd + abs Vgg <175 V.

DC Characteristics

Parameter Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance

Test Conditions VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 2 mA VDS = 5 V, ID = 500 mA

Symbol IDS

VGS TH GM

Min. -5

Typ. -3 -

Max.

Units mA V S

DC Characteristics

Test Conditions VDS = 0 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz

Symbol Min.

CISS

COSS

CRSS

Typ.

Max. -

Units pF

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

MAGX-000035-010000 MAGX-000035-01000S

GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - GHz

Electrical Specifications TA = 25 ºC

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000035-010000 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000035-010000 646864