KSP5179TA

KSP5179TA Datasheet

KSP5179

Part	Datasheet
KSP5179TA	KSP5179TA (pdf)

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KSP5179 KSP5179 High Frequency Transistor TO-92 Emitter Base Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Ta=25°C Derate above 25°C Collector Power Dissipation TC=25°C Derate above 25°C TJ TSTG Junction Temperature Storage Temperature Value 20 12 50 200 300 150 -55 ~ 150 Units V mA mW/°C mW/°C °C °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition VCEO sus BVCBO BVEBO ICBO Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current hFE VCE sat VBE sat fT Cob hfe Cc rbb’ NF DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain Collector Base Time Constant Noise Figure IC=3mA, IB=0 IC=10µA, IE=0 IE=10µA, IC=0 VCB=15V, IE=0 VCB=15V, IE=0, Ta=150°C VCB=1V, IC=3mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=6V, IC=5mA VCB=10V, IE=0, f=0.1 to1 MHz VCE=6V, IC=2mA, f=1KHz VCE=6V, IE=2mA, f=31.9MHz VCE=6V, IC=1.5mA, f=200MHz Min. 12 20 Max. 250 1 2000 1 300 14 Units V µA µA V MHz pF ps dB 2002 Fairchild Semiconductor Corporation KSP5179 Package Dimensions TO-92 1.27TYP 1.27TYP R2.29

PDF Datasheet Preview

KSP5179

KSP5179

High Frequency Transistor

TO-92

Emitter Base Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Ta=25°C Derate above 25°C

Collector Power Dissipation TC=25°C

Derate above 25°C

TJ TSTG

Junction Temperature Storage Temperature

Value 20 12 50 200 300 150
-55 ~ 150

Units V mA
mW/°C
mW/°C
°C °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

VCEO sus BVCBO BVEBO ICBO

Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current
hFE VCE sat VBE sat fT Cob hfe Cc rbb’ NF

DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain Collector Base Time Constant Noise Figure

IC=3mA, IB=0 IC=10µA, IE=0 IE=10µA, IC=0 VCB=15V, IE=0 VCB=15V, IE=0, Ta=150°C VCB=1V, IC=3mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=6V, IC=5mA VCB=10V, IE=0, f=0.1 to1 MHz VCE=6V, IC=2mA, f=1KHz VCE=6V, IE=2mA, f=31.9MHz VCE=6V, IC=1.5mA, f=200MHz

Min. 12 20

Max.
250 1 2000 1 300 14

Units V µA µA

V MHz pF
ps dB
2002 Fairchild Semiconductor Corporation

KSP5179

Package Dimensions

TO-92
1.27TYP
1.27TYP

R2.29

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Datasheet ID: KSP5179TA 634264