M20001G-14

M20001G-14 Datasheet

M20001

Part	Datasheet
M20001G-14	M20001G-14 (pdf)

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Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. M20001 High Bandwidth Dual 2:1 Mux/DeMux Passive Switch The M20001 is a high bandwidth, low power, dual differential single pole, double throw switch. Both switches are controlled using a single select pin. Due to the very high bandwidth of the device, it can be used for routing and switching of very high-speed NRZ data. The M20001 is offered in an industry standard, green and RoHS compliant, 3 mm x 3 mm QFN package. The device pinout is architected to enable optimized PCB routing while providing maximum crosstalk isolation. Crosstalk isolation is critical for successful data transmission at multi-gigabit speeds. The M20001 operates from a single V power supply. This supply is used to operate the switch control only, therefore, the M20001 consumes less than 2 mW of power during normal operation. • Two differential, single pole, double throw switches • Low insertion loss • 6 GHz 3 dB bandwidth • Very low power consumption • Superior crosstalk isolation • 3 x 3 mm, 16-pin QFN package • V supply voltage, no additional regulation needed • Industrial temp range -40 to 85 °C • 10G Ethernet • PCI Express Gen 3 Gbps • SAS/SATA • DisplayPort Gbps • USB 5 Gbps • 3G SDI • FibreChannel - Gbps Advance Information 20001-DSH-001-E Switch Control Diagram and Typical Application Diagram Port0+ Port0Port1+ Port1- 50k 100k 50k 50k 100k 50k M20001 Control Port0a+ Port0b+ Port0aPort0b- Port1a+ Port1b+ Port1aPort1b- Mindspeed Mindspeed Proprietary and Confidential January 2014 Advance Information Ordering Information Package Operating Case Temperature M20001G-14* 3x3 mm, 16-pin QFN package -40 °C to 85 °C * The letter “G” designator after the part number indicates that the device is RoHS compliant. Refer to for additional information. The RoHS compliant devices are backwards compatible with 225 °C reflow profiles. Level Advance Advance Advance Advance Advance January 2014 April 2013 February 2012 April 2011 January 2011 Updated Front page Applications Updated Ordering Information added 13P . Table 1-1 VESD, HBM maximum updated to 2000 V. Removed VESD, CDM and VESD, mm. Table 1-3 IDD maximum updated to 600 µA PTOTAL maximum updated to mW. Table 1-4 tSKEW, PN typical updated to 5 ps. typical updated to CH typical updated to Removed IOUT_SHORT and VOUT_OPEN. Chapter 2 Updated all Insertion/Return Loss charts. Advance release. M20001 Marking Diagrams 01rrG YYWW NOTE Early device samples may be labeled as AP and BP to identify early lot numbers , lot number identified as A or B and “P” for prototype 20001-DSH-001-E Mindspeed Mindspeed Proprietary and Confidential Electrical Characteristics Advance Information Unless noted otherwise, test conditions differential input data swing VIH, DATA = in this section are VDD 200 mV , nominal 800 = V, mVPPD 25 °C case temperature, 800 mV output swing, PRBS 27- 1 test pattern with RLOAD = 50 Ω, short traces and/or cables. Table Absolute Maximum Ratings Parameter VDD TSTORE VESD, HBM Supply voltage Storage temperature Electrostatic discharge voltage HBM DC current on data pins Note Minimum Typical Maximum Unit 2000 Table Symbol VDD TCASE ISW Recommended Operating Conditions Parameter Supply voltage Operating case temperature DC current on data pins Note Minimum Typical Maximum Unit Table Symbol IDD PTOTAL Power Consumption Specifications Parameter Quiescent power supply current DC power consumption Note Minimum Typical Maximum Unit

PDF Datasheet Preview

Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change.

M20001

High Bandwidth Dual 2:1 Mux/DeMux Passive Switch

The M20001 is a high bandwidth, low power, dual differential single pole, double throw switch. Both switches are controlled using a single select pin. Due to the very high bandwidth of the device, it can be used for routing and switching of very high-speed NRZ data.

The M20001 is offered in an industry standard, green and RoHS compliant, 3 mm x 3 mm QFN package. The device pinout is architected to enable optimized PCB routing while providing maximum crosstalk isolation. Crosstalk isolation is critical for successful data transmission at multi-gigabit speeds.

The M20001 operates from a single V power supply. This supply is used to operate the switch control only, therefore, the M20001 consumes less than 2 mW of power during normal operation.
• Two differential, single pole, double throw switches
• Low insertion loss
• 6 GHz 3 dB bandwidth
• Very low power consumption
• Superior crosstalk isolation
• 3 x 3 mm, 16-pin QFN package
• V supply voltage, no additional regulation needed
• Industrial temp range -40 to 85 °C
• 10G Ethernet
• PCI Express Gen 3 Gbps
• SAS/SATA
• DisplayPort Gbps
• USB 5 Gbps
• 3G SDI
• FibreChannel - Gbps

Advance Information
20001-DSH-001-E

Switch Control Diagram and Typical Application Diagram

Port0+ Port0Port1+ Port1-
50k 100k 50k
50k 100k 50k

M20001

Control

Port0a+ Port0b+

Port0aPort0b-

Port1a+ Port1b+

Port1aPort1b-

Mindspeed

Mindspeed Proprietary and Confidential

January 2014

Advance Information
Ordering Information

Package

Operating Case Temperature

M20001G-14*
3x3 mm, 16-pin QFN package
-40 °C to 85 °C
* The letter “G” designator after the part number indicates that the device is RoHS compliant. Refer to for additional information. The RoHS compliant devices are backwards compatible with 225 °C reflow profiles.

Level

Advance

Advance

Advance

Advance

Advance

January 2014 April 2013

February 2012

April 2011 January 2011

Updated Front page Applications
Updated Ordering Information added 13P . Table 1-1 VESD, HBM maximum updated to 2000 V.

Removed VESD, CDM and VESD, mm. Table 1-3 IDD maximum updated to 600 µA PTOTAL maximum updated to mW. Table 1-4 tSKEW, PN typical updated to 5 ps.
typical updated to CH typical updated to Removed IOUT_SHORT and VOUT_OPEN. Chapter 2 Updated all Insertion/Return Loss charts.

Advance release.

M20001 Marking Diagrams
01rrG

YYWW

NOTE Early device samples may be labeled as AP and BP to identify early lot numbers , lot number identified as A or B and “P” for prototype
20001-DSH-001-E

Mindspeed

Mindspeed Proprietary and Confidential

Electrical Characteristics

Advance Information

Unless noted otherwise, test conditions differential input data swing VIH, DATA =
in this section are VDD 200 mV , nominal 800
= V, mVPPD
25 °C case temperature, 800 mV output swing, PRBS 27- 1 test pattern
with

RLOAD = 50 Ω, short traces and/or cables.

Table Absolute Maximum Ratings

Parameter

VDD TSTORE VESD, HBM

Supply voltage Storage temperature Electrostatic discharge voltage HBM DC current on data pins

Note Minimum

Typical

Maximum Unit
2000

Table Symbol

VDD TCASE ISW

Recommended Operating Conditions Parameter

Supply voltage Operating case temperature DC current on data pins

Note Minimum

Typical

Maximum Unit

Table Symbol

IDD PTOTAL

Power Consumption Specifications Parameter

Quiescent power supply current DC power consumption

Note Minimum

Typical

Maximum Unit

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived M20001G-14 Datasheet file may be downloaded here without warranties.

Datasheet ID: M20001G-14 646843