NPT2019

NPT2019 Datasheet

NPA1006 NPT1007 NPA1003 NPT1010B NPT2010 NPT2022 NPT2021 NPA1007 NPA1008 NPT25100B NPT1015B NPT2020 NPT35050AB NPT1012B NPTB00025B 16NPTB00004D NPTB00004A MAGX-011086 NPT2018

Part	Datasheet
NPT2019	NPT2019 (pdf)

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RF High Power GaN Portfolio GaN RF Power Products Next generation high power semiconductor technology MACOM continues to develop industry-leading gallium nitride GaN RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW and communications customers. MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency and ruggedness for applications up to GHz. MACOM’s high power GaN in space-saving plastic is setting the standard for applications where SMT manufacturing, small size and light weight are required. 3 x 6 mm DFN packaged transistors are available in 10, 15, 50, and 90 W power levels. These DFN transistors are also offered in fully matched, high gain, power modules which provide highly integrated, compact solutions. Why choose GaN? MACOM GaN RF transistors improve upon the high power handling and voltage operation of LDMOS with the high frequency performance of GaAs. Improved efficiency, power, density and bandwidth give your applications enhanced performance in a smaller footprint. GaN advantages include: • High breakdown voltage • Superior power density • High RF gain and efficiency • Superior broadband capability • High frequency operation • Excellent thermal conductivity Leveraging deep experience in RF, MACOM engineers are expanding our power transistor family to fuel the future of military and commercial radars. These rugged devices deliver greater flexibility and multi-function capability in your radar communications. Our growing GaN portfolio includes 5 W-90 W transistors in SOT-89 or DFN plastic packaging, 1000 W ceramic packages and L-, S-band fully matched modules. Turn to MACOM today and in the future for superior performance, high power GaN solutions. Learn more at GaN Pallets Ceramic Flanged & Flangeless 14x24 Plastic SMD TO-272 Plastic PSOP Plastic 3x6 DFN Plastic Surface Mount 5x6 DFN Plastic Surface Mount 2.5x4.5 SOT-89 CW Pulsed Watts 10 20 30 100 200 Radar GaN in plastic surface mount modules enable SWAP improvements and speed time-to-market for next generation AESA radar systems • Fully matched over wide bandwidths enables new multifunction system capability with broad frequency operation and complex waveforms • Small size, SMT enables system SWAP and faster time-to-market through standard surface mount assembly • High gain and 50 V operation significantly reduces the size of energy storage capacitors and current draw • Engineered for SMT assembly with low thermals and low pulse droop MACOM’s portfolio of surface mount, GaN in plastic power modules affords radar system designers a common platform and pin-out architecture to leverage across a growing range of frequency bands. These fully matched, 2-stage GaN power modules deliver 90 W typical output power in a lightweight, 14 x 24 mm package, and deliver breakthrough power performance. Optimized for commercial air traffic control and military radar applications, the new SMT laminate packaged modules deliver GaN power performance while enabling significant application and manufacturing efficiencies. Supporting standard surface mount assembly, the module leverages commercial best practices for high-volume manufacturing, ensuring additional benefits including improved assembly yield, lower component count, and reduced touch labor. The 2-stage module is internally matched to 50 ohms, which requires no external matching components, and allows reduction in overall part count, further streamlining assembly processes. Supporting voltage operation from 28 to 50 V with high gain to reduce input power requirements, the module maximizes power and cooling efficiency and provides robust performance over a wide range of input voltages. Flexible voltage operation equips system operators to optimize the module for different power requirements and dynamically manage their total system power budget. Block Diagrams - GHz Line-ups MAGX-001214-500L00 500 W 32 dB gain MAGX-000035-01000P 2x MAGX-001214-125L00 MAGX-000040-00500P 250 W 30 dB gain 4x MAGX-001214-500L00 MAGX-000035-05000P

PDF Datasheet Preview

RF High Power GaN Portfolio

GaN RF Power Products

Next generation high power semiconductor technology

MACOM continues to develop industry-leading gallium nitride GaN RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW and communications customers.

MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency and ruggedness for applications up to GHz.

MACOM’s high power GaN in space-saving plastic is setting the standard for applications where SMT manufacturing, small size and light weight are required. 3 x 6 mm DFN packaged transistors are available in 10, 15, 50, and 90 W power levels. These DFN transistors are also offered in fully matched, high gain, power modules which provide highly integrated, compact solutions.

Why choose GaN?

MACOM GaN RF transistors improve upon the high power handling and voltage operation of LDMOS with the high frequency performance of GaAs. Improved efficiency, power, density and bandwidth give your applications enhanced performance in a smaller footprint.

GaN advantages include:
• High breakdown voltage
• Superior power density
• High RF gain and efficiency
• Superior broadband capability
• High frequency operation
• Excellent thermal conductivity

Leveraging deep experience in RF, MACOM engineers are expanding our power transistor family to fuel the future of military and commercial radars. These rugged devices deliver greater flexibility and multi-function capability in your radar communications.

Our growing GaN portfolio includes 5 W-90 W transistors in SOT-89 or DFN plastic packaging, 1000 W ceramic packages and L-, S-band fully matched modules.

Turn to MACOM today and in the future for superior performance, high power GaN solutions. Learn more at

GaN Pallets

Ceramic Flanged & Flangeless
14x24 Plastic SMD

TO-272 Plastic

PSOP Plastic
3x6 DFN Plastic Surface Mount
5x6 DFN Plastic Surface Mount
2.5x4.5 SOT-89

CW Pulsed

Watts 10 20 30
100 200

Radar

GaN in plastic surface mount modules enable SWAP improvements and speed time-to-market for next generation AESA radar systems
• Fully matched over wide bandwidths enables new multifunction system capability with broad frequency operation and complex waveforms
• Small size, SMT enables system SWAP and faster time-to-market through standard surface mount assembly
• High gain and 50 V operation significantly reduces the size of energy storage capacitors and current draw
• Engineered for SMT assembly with low thermals and low pulse droop

MACOM’s portfolio of surface mount, GaN in plastic power modules affords radar system designers a common platform and pin-out architecture to leverage across a growing range of frequency bands. These fully matched, 2-stage GaN power modules deliver 90 W typical output power in a lightweight, 14 x 24 mm package, and deliver breakthrough power performance.

Optimized for commercial air traffic control and military radar applications, the new SMT laminate packaged modules deliver GaN power performance while enabling significant application and manufacturing efficiencies. Supporting standard surface mount assembly, the module leverages commercial best practices for high-volume manufacturing, ensuring additional benefits including improved assembly yield, lower component count, and reduced touch labor. The 2-stage module is internally matched to 50 ohms, which requires no external matching components, and allows reduction in overall part count, further streamlining assembly processes.

Supporting voltage operation from 28 to 50 V with high gain to reduce input power requirements, the module maximizes power and cooling efficiency and provides robust performance over a wide range of input voltages. Flexible voltage operation equips system operators to optimize the module for different power requirements and dynamically manage their total system power budget.

Block Diagrams
- GHz Line-ups

MAGX-001214-500L00 500 W 32 dB gain

MAGX-000035-01000P
2x MAGX-001214-125L00

MAGX-000040-00500P
250 W 30 dB gain
4x MAGX-001214-500L00

MAGX-000035-05000P

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived NPT2019 Datasheet file may be downloaded here without warranties.

Datasheet ID: NPT2019 646836