P62BN820MA02636
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P62BN820MA2636T (pdf) |
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P62BN820MA2636 |
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Ultra Broadband DC Blocking Insertion Loss Magnitude dB P21BN300MA03976 P42BN820MA03152 P62BN820MA02636 Frequency GHz l X7R temperature and voltage stability l Resonance free DC blocking to >40GHz l SMT by solder or epoxy bonding l Low frequency stability over temperature l Very low series inductance l 0201, 0402 and 0602 footprints Functional applications l Test Equipment, Photonics, SONET, TOSA/ROSA, High Speed Data l Broadband Microwave/Millimeter Wave l Transimpedance Amplifiers Specification Electrical Temperature Coefficient of Capacitance X5R -55°C to +85°C TCC ± 15% X7R -55°C to +125°C TCC ± 15% Capacitance Range 1.5nF to 220nF Maximum Assembly Process Temperature 250ºC GHz Range Multilayer Capacitor Range Electrical characteristics - Opti-Capº Capacitance Voltage MLC Rating P21BN300MA04733 100nF 30pF DF Max IR Frequency Min Range >102 MΩ P21BN300MA04282 22nF 30pF >102 MΩ P21BN300MA03976 10nF P21BN300MA04678 1.5nF P42BN820MA03152 220nF 30pF 82pF >102 MΩ >102 MΩ 16KHz - >40GHz >102 MΩ P42BN820MA04679 22nF 82pF >102 MΩ P62BN820MA02636 100nF 82pF >102 MΩ |
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