VWM200-01P
VWM200-01P Datasheet
VWM 200-01P
| Part | Datasheet |
|---|---|
VWM200-01P |
VWM200-01P (pdf) |
| PDF Datasheet Preview |
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| Advanced Technical Information VWM 200-01P Three phase full bridge with Trench MOSFETs S2 L- VDSS = 100 V RDSon = mΩ ID25 = 210 A L1 L2 L3 MOSFETs Symbol VDSS VGS ID25 ID80 ID25 ID80 RDSon VGSth IDSS IGSS Qg Q Qgd td on t td off t VF trr RthJC R thJH Conditions Maximum Ratings TVJ = 25°C to 150°C TC = 25°C TC = 80°C t TC = 25°C diode TC = 80°C diode ±20 -ou Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. VGS = 10 V ID = 100 A VDS = 20 V ID = 2 mA e VDS = 100 V VGS = 0 V TVJ = 25°C TVJ = 125°C s VGS = ±20 V VDS = 0 V a VGS= 10 V VDS = 80 V ID = 200 A hVGS= 10 V VDS = 50 V pID = 50 A RG = Ω diode IF = 100 A VGS= 0 V diode IF = 40 A -di/dt = 200 A/µs VDS= 30 V with heat transfer paste AC drives • in automobiles and trucks - electric power steering - starter generator - etc... • in industrial vehicles - propulsion drives - fork lift drives • in battery supplied equipment • package - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate with optimized heat transfer 0627 IXYS reserves the right to change limits, test conditions and dimensions. 2006 IXYS All rights reserved Advanced Technical Information VWM 200-01P Module Tstg VISOL Md Conditions IISOL 1 mA 50/60 Hz t = 1 min Mounting torque M5 |
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