IHW20T120
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IHW20T120FKSA1 (pdf) |
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Soft Switching Series IHW20T120 Low Loss DuoPack IGBT in and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Short circuit withstand time 10µs • Designed for : - Soft Switching Applications - Induction Heating • and Fieldstop technology for 1200 V applications offers - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE sat • Very soft, fast recovery anti-parallel EmCon HE diode • Low EMI • Qualified according to JEDEC1 for target applications • Application specific optimisation of inverse diode • Pb-free lead plating RoHS compliant PG-TO-247-3-21 Type VCE sat ,Tj=25°C Tj,max Marking Package IHW20T120 1200V 20A 1.7V 150°C H20T120 PG-TO-247-3-21 Maximum Ratings Parameter Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave Gate-emitter voltage Short circuit withstand time2 VGE = 15V, VCC 1200V, Tj 150°C Power dissipation, TC = 25°C Operating junction temperature Storage temperature VCE IC ICpuls IF IFpuls IFSM VGE tSC Ptot Tj Tstg 1200 40 20 60 23 13 36 50 130 120 ±20 10 Unit V A V µs W °C °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s. Power Semiconductors Soft Switching Series Soldering temperature, 1.6mm in. from case for 10s - IHW20T120 Power Semiconductors Soft Switching Series IHW20T120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient RthJC RthJCD RthJA Conditions |
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