VMO150-01P1

VMO150-01P1 Datasheet

VMO150-01P1

Part	Datasheet
VMO150-01P1	VMO150-01P1 (pdf)

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HiPerFETTM Power MOSFETs in ECO-PAC 2 Electrically Isolated Back Surface Single MOSFET VMO150-01P1 VDSS = 100 V ID25 = 165 A RDS on = 8 < 250 ns MOSFET Symbol Conditions Maximum Ratings VDSS VDGR VGSM ID25 I D RMS IDM I dv/dt TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient ±20 ±30 TC = 25°C MOSFET chip capability External lead current limit TC = 25°C 1 T = 25°C T = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 V/ns TC = 25°C Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VDSS VGS = 0 V, ID = 3 mA V GS th IGSS V = V , I = 8 mA VGS = ±20 V, VDS = 0 ±100 IDSS RDS on gfs

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HiPerFETTM Power MOSFETs
in ECO-PAC 2

Electrically Isolated Back Surface

Single MOSFET

VMO150-01P1

VDSS = 100 V

ID25 = 165 A

RDS on = 8
< 250 ns

MOSFET Symbol

Conditions

Maximum Ratings

VDSS VDGR

VGSM

ID25 I

D RMS

IDM I
dv/dt

TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1

Continuous Transient
±20
±30

TC = 25°C MOSFET chip capability External lead current limit

TC = 25°C 1 T = 25°C

T = 25°C

TC = 25°C

IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2

V/ns

TC = 25°C

Conditions

Characteristic Values

TJ = 25°C, unless otherwise specified min. typ. max.

VDSS

VGS = 0 V, ID = 3 mA

V GS th

IGSS

V = V , I = 8 mA

VGS = ±20 V, VDS = 0
±100

IDSS

RDS on gfs

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Datasheet ID: VMO150-01P1 644486