MWI451-17E9
MWI451-17E9 Datasheet
MWI 451-17 E9
| Part | Datasheet |
|---|---|
MWI451-17E9 |
MWI451-17E9 (pdf) |
| PDF Datasheet Preview |
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| MWI 451-17 E9 IGBT Modules Sixpack IC60 = 475 A VCES = 1700 V VCE sat typ = V Preliminary data 15 28 11/12 9/10 IGBTs Symbol VCES VGES IC25 IC60 IC80 RBSOA tSC SCSOA Ptot VCE sat VGE th ICES IGES td on t td off t Eon E C ies QGon RthJC 29 13 14 E72873 See outline drawing for pin arrangement Conditions TVJ = 25°C to 125°C TC = 25°C TC = 60°C TC = 80°C RG = Ω TVJ = 125°C Clamped inductive load L = 100 µH VCE = 1200 V VGE = ±15 V RG = Ω; TVJ = 125°C non-repetitive VCEmax < VCES TC = 25°C tFeatures - NPT3 IGBT technology Maximum Ratings 1700 u ± 20 o475 -ICM = 750 VCEK VCES s e 10 - low saturation voltage - low switching losses - square RBSOA, no latch up - high short circuit capability - positive temperature coefficient for easy parallelling - MOS input, voltage controlled - ultra fast free wheeling diodes - solderable pins for PCB mounting - package with copper base plate Advantages |
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