JANTXV2N4150
JANTXV2N4150 Datasheet
• Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/394
| Part | Datasheet |
|---|---|
JANTXV2N4150 |
JANTXV2N4150 (pdf) |
| PDF Datasheet Preview |
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| NPN Power Silicon Transistor 2N4150 • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/394 • TO-5 Package Maximum Ratings Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Total Power Dissipation TA TC +25 +25 °C °C Operating & Storage Temperature Range Thermal Resistance, Junction-to-Case Junction-to-Ambient Symbol VCEO VCBO VEBO IC PT Top, Tstg 1 Derate linearly mW/°C for TA > +25°C 2 Derate linearly 100 mW/°C for TC > +25°C 2N4150 70 100 160 15 -65 to +200 Units Vdc Adc W °C °C/W Electrical Characteristics TC = 25°C unless otherwise noted OFF Characteristics Collector - Emitter Breakdown Voltage IC = 100 mAdc Collector - Emitter Cutoff Current VBE = Vdc, VCE = 60 Vdc Collector - Emitter Cutoff Current VCE = 60 Vdc Emitter - Base Cutoff Current VEB = Vdc VEB = Vdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 80 Vdc Symbol V BR CEO ICEX ICEO IEBO ICBO Mimimum 70 ------- Maximum --- Units Vdc uAdc uAdc Electrical Characteristics -con’t ON Characteristics Collector-Base Cutoff Current IC = Adc, VCE = Vdc IC = Adc, VCE = Vdc IC = Adc, VCE = Vdc Collector-Emitter Saturation Voltage IC = Adc, IB = Adc IC = Adc, IB = Adc |
| More datasheets: 3000-181 | 3000-332 | 3000-331 | 3000-272 | 3000-182 | 3000-221 | 3000-222 | 3000-122 | DEMM-9S-S | 50014 |
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