MIXA101W1200EH

MIXA101W1200EH Datasheet

Part name Marking on product MIXA101W1200EH

Part	Datasheet
MIXA101W1200EH	MIXA101W1200EH (pdf)

PDF Datasheet Preview
Six-Pack XPT IGBT Part name Marking on product MIXA101W1200EH MIXA 101W1200EH VCES = 1200 V IC25 = 155 A VCE sat = V 13, 21 1 2 3 4 14, 20 D1 T1 D4 T4 D2 T2 D5 T5 11 12 D3 T3 19 17 15 D6 T6 E72873 Features: • Easy paralleling due to the positive temperature of the on-state voltage • Rugged XPT design Xtreme light Punch Through results in - short circuit rated for 10 usec. - very low gate charge - square RBSOA 3x IC - low EMI • Thin wafer technology combined with the XPT design results in a competitive low VCE sat Application: • AC motor drives • Solar inverter • Medical equipment • Uninterruptible power supply • Air-conditioning systems • Welding equipment • Switched-mode and resonant-mode power supplies Package: • "E3-Pack" standard outline • Insulated copper base plate • Soldering pins for PCB mounting • Optimizes pin layout IXYS reserves the right to change limits, test conditions and dimensions. 2011 IXYS All rights reserved 20110715a MIXA 101W1200EH Ouput Inverter T1 - T6 VCES VGES VGEM IC25 IC80 collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current Ptot VCE sat total power dissipation collector emitter saturation voltage VGE th ICES gate emitter threshold voltage collector emitter leakage current IGES QG on td on tr td off tf Eon Eoff RBSOA gate emitter leakage current Ordering Standard Part Name MIXA101W1200EH Marking on Product Delivering Mode Base Qty Ordering Code MIXA101W1200EH 511591 IXYS reserves the right to change limits, test conditions and dimensions. 2011 IXYS All rights reserved 20110715a MIXA 101W1200EH Transistor T1 - T6 VGE = 15 V IC 100 [A] TVJ = 25°C TVJ = 125°C VCE [V] Fig. 1 Typ. output characteristics IC 120 100 [A] 80 TVJ = 125°C TVJ = 25°C 6 7 8 9 10 11 12 13 VGE [V] Fig. 3 Typ. tranfer characteristics 18 RG = VCE = 600 V 16 VGE = ±15 V 14 TVJ = 125°C 10 [mJ] 8 Eoff Eon 120 160 200 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. 2011 IXYS All rights reserved VGE = 15 V 17 V 19 V IC 100 TVJ = 125°C [A] 13 V 11 V VCE [V] Fig. 2 Typ. output characteristics IC = 100 A VCE = 600 V 15 VGE 10 [V] QG [nC] Fig. 4 Typ. turn-on gate charge 16 IC = 100 A VCE = 600 V 14 VGE = ±15 V TVJ = 125°C Eoff [mJ] 10 Eon 8 12 16 20 24 RG [:] Fig. 6 Typ. switching energy vs. gate resistance 20110715a

PDF Datasheet Preview

Six-Pack XPT IGBT

Part name Marking on product MIXA101W1200EH

MIXA 101W1200EH

VCES = 1200 V IC25 = 155 A VCE sat = V
13, 21 1 2
3 4 14, 20

D1 T1

D4 T4

D2 T2

D5 T5
11 12

D3 T3
19 17 15

D6 T6

E72873

Features:
• Easy paralleling due to the positive temperature of the on-state voltage
• Rugged XPT design Xtreme light Punch Through results in - short circuit rated for 10 usec. - very low gate charge - square RBSOA 3x IC - low EMI
• Thin wafer technology combined with the XPT design results in a competitive low VCE sat

Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies

Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Optimizes pin layout

IXYS reserves the right to change limits, test conditions and dimensions. 2011 IXYS All rights reserved
20110715a

MIXA 101W1200EH

Ouput Inverter T1 - T6

VCES

VGES VGEM

IC25 IC80
collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current

Ptot VCE sat
total power dissipation collector emitter saturation voltage

VGE th ICES
gate emitter threshold voltage collector emitter leakage current

IGES

QG on
td on tr td off tf Eon Eoff

RBSOA
gate emitter leakage current
Ordering Standard

Part Name MIXA101W1200EH
Marking on Product Delivering Mode Base Qty Ordering Code

MIXA101W1200EH
511591

IXYS reserves the right to change limits, test conditions and dimensions. 2011 IXYS All rights reserved
20110715a

MIXA 101W1200EH

Transistor T1 - T6

VGE = 15 V

IC 100 [A]

TVJ = 25°C

TVJ = 125°C

VCE [V]

Fig. 1 Typ. output characteristics

IC 120 100
[A] 80

TVJ = 125°C TVJ = 25°C
6 7 8 9 10 11 12 13

VGE [V] Fig. 3 Typ. tranfer characteristics
18 RG = VCE = 600 V
16 VGE = ±15 V 14 TVJ = 125°C
10 [mJ] 8

Eoff Eon
120 160 200

IC [A] Fig. 5 Typ. switching energy vs. collector current

IXYS reserves the right to change limits, test conditions and dimensions. 2011 IXYS All rights reserved

VGE = 15 V 17 V 19 V

IC 100 TVJ = 125°C [A]
13 V 11 V

VCE [V]

Fig. 2 Typ. output characteristics

IC = 100 A VCE = 600 V 15

VGE 10 [V]

QG [nC] Fig. 4 Typ. turn-on gate charge
16 IC = 100 A VCE = 600 V
14 VGE = ±15 V TVJ = 125°C

Eoff
[mJ] 10

Eon 8
12 16 20 24

RG [:] Fig. 6 Typ. switching energy vs. gate resistance
20110715a

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MIXA101W1200EH Datasheet file may be downloaded here without warranties.

Datasheet ID: MIXA101W1200EH 644383