MIO1200-25E10
MIO1200-25E10 Datasheet
MIO 1200-25E10
| Part | Datasheet |
|---|---|
MIO1200-25E10 |
MIO1200-25E10 (pdf) |
| PDF Datasheet Preview |
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| MIO 1200-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 2500 V VCE sat typ. = V IGBT Symbol VCES VGES IC80 ICM t VCE sat VGE th ICES IGES tFeatures Conditions u VGE = 0 V o TC = 80°C - tp = 1 ms TC = 80°C 1800 VCEM CHIP 2500 e VGE < 15 V TVJ < 125°C Maximum Ratings 2500 ± 20 1200 2400 a s Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. • IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance • AC power converters for - industrial drives - windmills - traction • LASER pulse generator IC = 1200 A VGE = 15 V TVJ = 25°C TVJ = 125°C h IC = 240 mA VCE = VGE p VCE = 2500 V VGE = 0 V TVJ = 125°C 120 mA VCE = 0 V VGE = ± 20 V TVJ = 125°C 500 nA td on t td off t Eoff |
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