IRGP4262DPBF

IRGP4262DPBF Datasheet

IRGP4262DPbF IRGP4262D-EPbF

Part	Datasheet
IRGP4262DPBF	IRGP4262DPBF (pdf)

Related Parts	Information
IRGP4262D-EPBF	IRGP4262D-EPBF

PDF Datasheet Preview
VCES = 650V IC = 40A, TC =100°C tSC TJ max = 175°C VCE ON typ. = 1.7V IC = 24A Applications • Industrial Motor Drive • UPS Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode n-channel G Gate E C G IRGP4262DPbF TO-247AC C Collector E C G IRGP4262D-EPbF TO-247AD E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Base part number IRGP4262DPBF IRGP4262D-EPBF Package Type TO-247AC TO-247AD Standard Pack Form Tube Quantity 25 Tube Orderable Part Number IRGP4262DPBF IRGP4262D-EPBF Absolute Maximum Ratings VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 25°C IF TC = 100°C VGE PD TC = 25°C PD TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 60 40 96 45 27 ±20 250 125 -40 to +175 300 in. 1.6mm from case 10 lbf•in N•m Units V A Thermal Resistance Parameter IGBT Diode Thermal Resistance Junction-to-Case- each IGBT  Thermal Resistance Junction-to-Case- each Diode  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount

PDF Datasheet Preview

VCES = 650V

IC = 40A, TC =100°C
tSC TJ max = 175°C

VCE ON typ. = 1.7V IC = 24A

Applications
• Industrial Motor Drive
• UPS

Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient

IRGP4262DPbF IRGP4262D-EPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
n-channel

G Gate

E C G IRGP4262DPbF TO-247AC

C Collector

E C G IRGP4262D-EPbF TO-247AD

E Emitter

Benefits High Efficiency in a Wide Range of Applications

Rugged Transient Performance

Increased Reliability Excellent Current Sharing in Parallel Operation

Base part number

IRGP4262DPBF IRGP4262D-EPBF

Package Type

TO-247AC TO-247AD

Standard Pack

Form Tube

Quantity 25

Tube

Orderable Part Number

IRGP4262DPBF IRGP4262D-EPBF

Absolute Maximum Ratings

VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 25°C IF TC = 100°C

VGE PD TC = 25°C PD TC = 100°C TJ TSTG

Parameter

Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current

Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw

Max.
650 60 40 96 45 27 ±20 250 125 -40 to +175
300 in. 1.6mm from case 10 lbf•in N•m

Units V A

Thermal Resistance

Parameter

IGBT Diode

Thermal Resistance Junction-to-Case- each IGBT  Thermal Resistance Junction-to-Case- each Diode  Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount

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Datasheet ID: IRGP4262DPBF 638347