APTM100A12STG

APTM100A12STG Datasheet

APTM100A12ST

Part	Datasheet
APTM100A12STG	APTM100A12STG (pdf)

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APTM100A12ST Phase leg Schottky Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = max Tj = 25°C ID = 68A Tc = 25°C VBUS 0 /V BU S Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals for signal and M5 for power for easy PCB mounting Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current 1000 Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C 1250 IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. G1 S1 NTC1 NTC2 S2 G2 APT website APTM100A12ST All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS IDSS RDS on Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain Source on Resistance VGS = 0V, ID = 750µA VGS = 0V,VDS = 1000V Tj = 25°C VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 34A 1000 V 200 µA 1000 120 VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current

PDF Datasheet Preview

APTM100A12ST

Phase leg Schottky Series &
parallel diodes MOSFET Power Module

VDSS = 1000V RDSon = max Tj = 25°C ID = 68A Tc = 25°C

VBUS
0 /V BU S

Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - M5 power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals for signal and M5 for power for easy PCB mounting

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current
1000

Tc = 25°C

Tc = 80°C

IDM VGS RDSon

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance
±30

PD Maximum Power Dissipation

Tc = 25°C
1250

IAR Avalanche current repetitive and non repetitive

EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

G1 S1 NTC1 NTC2 S2 G2

APT website

APTM100A12ST

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

BVDSS IDSS RDS on

Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain Source on Resistance

VGS = 0V, ID = 750µA VGS = 0V,VDS = 1000V Tj = 25°C

VGS = 0V,VDS = 800V Tj = 125°C VGS = 10V, ID = 34A
1000

V 200 µA 1000 120

VGS th Gate Threshold Voltage IGSS Gate Source Leakage Current

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Datasheet ID: APTM100A12STG 648853