IXUC100N055
IXUC100N055 Datasheet
Trench Power MOSFET IXUC100N055 ISOPLUS220TM
| Part | Datasheet |
|---|---|
IXUC100N055 |
IXUC100N055 (pdf) |
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| ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC100N055 ISOPLUS220TM Electrically Isolated Back Surface VDSS = ID25 = RDS on = 55 V 100 A ISOPLUS 220TM Test Conditions Maximum Ratings VDSS VGS ID25 ID90 IS25 IS90 ID RMS EAS PD TJ TJM Tstg TL VISOL FC Weight RDS on VGS th IDSS IGSS TJ = 25°C to 150°C Continuous ±20 TC = 25°C Note 1 TC = 90°C, Note 1 TC = 25°C Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C t TC = 25°C -ou mm in. from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute e Mounting force with clips -55 +175 -55 +125 2500 11 65 / N/lb as Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. h VGS = 10 V, ID = ID90, Note 3 pVDS = VGS, ID = 1 mA VDS = VDSS VGS = 0 V TJ = 125°C 10 µA VGS = ±20 VDC, VDS = 0 ±200 nA Isolated back surface* G = Gate, S = Source D = Drain, * Patent pending Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation |
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