IXTA02N250
IXTA02N250 Datasheet
IXTA02N250 IXTH02N250 IXTV02N250S
| Part | Datasheet |
|---|---|
IXTA02N250 |
IXTA02N250 (pdf) |
| Related Parts | Information |
|---|---|
IXTH02N250 |
IXTH02N250 |
IXTV02N250S |
IXTV02N250S |
| PDF Datasheet Preview |
|---|
| High Voltage Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = RDS on 2500V 200mA 450Ω TO-263 IXTA VDSS VDGR VGSS VGSM ID25 IDM TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm in. from Case for 10s Plastic Body for 10s Mounting Torque TO-247 Mounting Force PLUS220 & TO-263 TO-263 PLUS220 TO-247 Maximum Ratings 2500 2500 ±20 ±30 - 55 +150 - 55 +150 / 10 / Nm/lb.in N/lb. G S D Tab TO-247 IXTH D Tab PLUS220SMD IXTV_S D Tab G = Gate D = Drain S = Source Tab = Drain Test Conditions TJ = 25°C, Unless Otherwise Specified BVDSS VGS = 0V, ID = 250uA VGS th VDS = VGS, ID = 250uA IGSS VGS = ±20V, VDS = 0V |
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