APTM50DHM75TG

APTM50DHM75TG Datasheet

APTM50DHM75TG

Part	Datasheet
APTM50DHM75TG	APTM50DHM75TG (pdf)

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APTM50DHM75TG Asymmetrical - Bridge MOSFET Power Module VDSS = 500V RDSon = typ Tj = 25°C ID = 46A Tc = 25°C VBUS Q1 OUT1 OUT2 0/VBUS SENSE NTC1 0/V BU S VBUS SENSE G4 S4 NT C2 VBUS SENSE VBUS S1 G1 G4 S4 0/VBUS 0/VBUS SENSE OUT2 OUT1 NTC2 NTC1 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM50DHM75TG All ratings Tj = 25°C unless otherwise specified

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APTM50DHM75TG

Asymmetrical - Bridge MOSFET Power Module

VDSS = 500V RDSon = typ Tj = 25°C ID = 46A Tc = 25°C

VBUS Q1

OUT1

OUT2
0/VBUS SENSE

NTC1
0/V BU S

VBUS SENSE

G4 S4 NT C2

VBUS SENSE

VBUS

S1 G1

G4 S4
0/VBUS
0/VBUS SENSE

OUT2

OUT1

NTC2 NTC1

Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS

IDM VGS RDSon

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance

Tc = 25°C

Tc = 80°C
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM50DHM75TG

All ratings Tj = 25°C unless otherwise specified

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Datasheet ID: APTM50DHM75TG 648904