IXTV102N20T
IXTV102N20T Datasheet
IXTH102N20T IXTQ102N20T IXTV102N20T
| Part | Datasheet |
|---|---|
IXTV102N20T |
IXTV102N20T (pdf) |
| PDF Datasheet Preview |
|---|
| Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH102N20T IXTQ102N20T IXTV102N20T VDSS = ID25 = RDS on 200 102 V A mΩ VDSS VGSM ILRMS IDM I dv/dt PD TJ TJM Tstg TSOLD Md F Weight Test Conditions TJ = 25°C to 175°C Transient T = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM T = 25°C TC = 25°C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 175°C, RG = Ω TC = 25°C mm in. from case for 10 s Plastic body for 10 seconds Mounting torque TO-247 & TO-3P Mounting force PLUS220 TO-247 TO-3P PLUS220 Maximum Ratings TO-247 IXTH ± 30 J TO-3P IXTQ V/ns -55 +175 -55 +175 °C PLUS220 IXTV / 10 Nm/lb.in. N/lb. G = Gate S = Source D = Drain TAB = Drain Test Conditions TJ = 25°C unless otherwise specified BVDSS VGS = 0 V, ID = 250 uA Characteristic Values Min. Typ. Max. VGS th VDS = VGS, ID = 1 mA IGSS VGS = ± 20 V, VDS = 0 V |
| More datasheets: LTST-S320KYKT | LTST-S320KEKT | DCMM13W6SN | DBMG21C1PJK87 | 135-503LAG-J01 | IPP120N06NGAKSA1 | IPB120N06N G | DCMZ-21XA4S-N-K126 | DCMC-21CA4S-J-A197 | CA3102R28-12PF80A176 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IXTV102N20T Datasheet file may be downloaded here without warranties.