IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2
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IXTQ30N50L2 (pdf) |
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IXTH30N50L2 |
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IXTT30N50L2 |
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Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm 0.063in from case for 10s Plastic body for 10s Mounting torque TO-247, TO-3P TO-247 TO-3P TO-268 IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 D O DD G O ww Maximum Ratings ±20 ±30 -55 to +150 +150 -55 to +150 Nm/lb.in. Test Conditions TJ = 25°C, unless otherwise specified BV DSS VGS th 250uA VDS = VGS, ID = 250uA ±30V, V = 0V GS = 125°C R DS on 10V, I , Note 1 Characteristic Values Min. 500 Typ. Max. V V ±100 nA 50 uA 300 uA 200 mΩ VDSS = 500V ID25 = 30A RDS on 200mΩ TO-247 IXTH TO-3P IXTQ TO-268 IXTT G = Gate D = Drain S = Source TAB = Drain z Designed for linear operation z International standard packages z Unclamped Inductive Switching UIS rated. z Molding epoxies meet UL 94 V-0 |
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