IXTQ30N50L2

IXTQ30N50L2 Datasheet


IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2

Part Datasheet
IXTQ30N50L2 IXTQ30N50L2 IXTQ30N50L2 (pdf)
Related Parts Information
IXTH30N50L2 IXTH30N50L2 IXTH30N50L2
IXTT30N50L2 IXTT30N50L2 IXTT30N50L2
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Linear L2TM Power MOSFET with extended FBSOA

N-Channel Enhancement Mode

Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg TL TSOLD Md Weight

Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C

TC = 25°C
1.6mm 0.063in from case for 10s Plastic body for 10s Mounting torque TO-247, TO-3P TO-247 TO-3P TO-268

IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2

D O DD

G O ww

Maximum Ratings
±20
±30
-55 to +150
+150
-55 to +150

Nm/lb.in.

Test Conditions

TJ = 25°C, unless otherwise specified

BV DSS

VGS th
250uA

VDS = VGS, ID = 250uA
±30V,

V = 0V GS
= 125°C

R DS on
10V,

I , Note 1

Characteristic Values

Min. 500

Typ.

Max. V

V ±100 nA
50 uA 300 uA 200 mΩ

VDSS = 500V ID25 = 30A RDS on 200mΩ

TO-247 IXTH

TO-3P IXTQ

TO-268 IXTT

G = Gate D = Drain S = Source TAB = Drain
z Designed for linear operation z International standard packages z Unclamped Inductive Switching

UIS rated. z Molding epoxies meet UL 94 V-0
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Datasheet ID: IXTQ30N50L2 644332